Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50. 110202 doi:10.1143/jjap.50.110202
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Huang, Sen | Author | |
| Yang, Shu | Author | ||
| Roberts, John | Author | ||
| Chen, Kevin J. | Author | ||
| Year | 2011 (October 25) | Volume | 50 |
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.50.110202Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15036596 | Long-form Identifier | mindat:1:5:15036596:1 |
| GUID | 0 | ||
| Full Reference | Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50. 110202 doi:10.1143/jjap.50.110202 | ||
| Plain Text | Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50. 110202 doi:10.1143/jjap.50.110202 | ||
| In | (2011) Japanese Journal of Applied Physics Vol. 50. Japan Society of Applied Physics | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
