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Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50 (11) 110202 doi:10.7567/jjap.50.110202

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Reference TypeJournal (article/letter/editorial)
TitleThreshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors
JournalJapanese Journal of Applied Physics
AuthorsHuang, SenAuthor
Yang, ShuAuthor
Roberts, JohnAuthor
Chen, Kevin J.Author
Year2011 (November 1)Volume50
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.110202Search in ResearchGate
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Mindat Ref. ID15037172Long-form Identifiermindat:1:5:15037172:6
GUID0
Full ReferenceHuang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50 (11) 110202 doi:10.7567/jjap.50.110202
Plain TextHuang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50 (11) 110202 doi:10.7567/jjap.50.110202
In(2011, November) Japanese Journal of Applied Physics Vol. 50 (11) Japan Society of Applied Physics

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Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50. 110202 doi:10.1143/jjap.50.110202
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Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2012) Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement. physica status solidi (c), 9 (3). 923-926 doi:10.1002/pssc.201100302
Chang, Li-Cheng, Yin, Shin-Yi, Wu, Chao-Hsin (2019) Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors. Journal of Physics D: Applied Physics, 52. 195102pp. doi:10.1088/1361-6463/ab053d
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