Watanabe, Suguru, Saito, Hidekazu, Mineno, Yusuke, Yuasa, Shinji, Ando, Koji (2011) Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaO$_{x}$ Tunnel Barrier. Japanese Journal of Applied Physics, 50. 113002 doi:10.1143/jjap.50.113002
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaO$_{x}$ Tunnel Barrier | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Watanabe, Suguru | Author | |
| Saito, Hidekazu | Author | ||
| Mineno, Yusuke | Author | ||
| Yuasa, Shinji | Author | ||
| Ando, Koji | Author | ||
| Year | 2011 (October 25) | Volume | 50 |
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.50.113002Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15036618 | Long-form Identifier | mindat:1:5:15036618:0 |
| GUID | 0 | ||
| Full Reference | Watanabe, Suguru, Saito, Hidekazu, Mineno, Yusuke, Yuasa, Shinji, Ando, Koji (2011) Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaO$_{x}$ Tunnel Barrier. Japanese Journal of Applied Physics, 50. 113002 doi:10.1143/jjap.50.113002 | ||
| Plain Text | Watanabe, Suguru, Saito, Hidekazu, Mineno, Yusuke, Yuasa, Shinji, Ando, Koji (2011) Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaO$_{x}$ Tunnel Barrier. Japanese Journal of Applied Physics, 50. 113002 doi:10.1143/jjap.50.113002 | ||
| In | (2011) Japanese Journal of Applied Physics Vol. 50. Japan Society of Applied Physics | ||
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