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Watanabe, Suguru, Saito, Hidekazu, Mineno, Yusuke, Yuasa, Shinji, Ando, Koji (2011) Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOxTunnel Barrier. Japanese Journal of Applied Physics, 50 (11) 113002 doi:10.7567/jjap.50.113002

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Reference TypeJournal (article/letter/editorial)
TitleOrigin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOxTunnel Barrier
JournalJapanese Journal of Applied Physics
AuthorsWatanabe, SuguruAuthor
Saito, HidekazuAuthor
Mineno, YusukeAuthor
Yuasa, ShinjiAuthor
Ando, KojiAuthor
Year2011 (November 1)Volume50
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.113002Search in ResearchGate
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Mindat Ref. ID15037194Long-form Identifiermindat:1:5:15037194:8
GUID0
Full ReferenceWatanabe, Suguru, Saito, Hidekazu, Mineno, Yusuke, Yuasa, Shinji, Ando, Koji (2011) Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOxTunnel Barrier. Japanese Journal of Applied Physics, 50 (11) 113002 doi:10.7567/jjap.50.113002
Plain TextWatanabe, Suguru, Saito, Hidekazu, Mineno, Yusuke, Yuasa, Shinji, Ando, Koji (2011) Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOxTunnel Barrier. Japanese Journal of Applied Physics, 50 (11) 113002 doi:10.7567/jjap.50.113002
In(2011, November) Japanese Journal of Applied Physics Vol. 50 (11) Japan Society of Applied Physics

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Narayananellore, Sai Krishna, Doko, Naoki, Matsuo, Norihiro, Saito, Hidekazu, Yuasa, Shinji (2018) Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fn04
Le Breton, J. C., Saito, H., Yuasa, S., Ando, K. (2009) Low effective barrier height of GaOx tunnel barrier in metal/semiconductor hybrid junctions. Applied Physics Letters, 94 (15). 152101pp. doi:10.1063/1.3119320
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Nagahama, Taro, Saito, Hidekazu, Yuasa, Shinji (2010) Hot electron transport in magnetic tunnel transistors with an epitaxial MgO tunnel barrier. Applied Physics Letters, 96 (11). 112509pp. doi:10.1063/1.3360222
Matsuo, Norihiro, Doko, Naoki, Takada, Tetsuro, Saito, Hidekazu, Yuasa, Shinji (2016) High Magnetoresistance in Fully Epitaxial Magnetic Tunnel Junctions with a SemiconductingGaOxTunnel Barrier. Physical Review Applied, 6 (3). doi:10.1103/physrevapplied.6.034011
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