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Ohta, Toshiyuki, Gelloz, Bernard, Koshida, Nobuyoshi (2011) Counter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4Solution from Nanosilicon Emitter. Japanese Journal of Applied Physics, 50 (1) 10104 doi:10.7567/jjap.50.010104

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Reference TypeJournal (article/letter/editorial)
TitleCounter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4Solution from Nanosilicon Emitter
JournalJapanese Journal of Applied Physics
AuthorsOhta, ToshiyukiAuthor
Gelloz, BernardAuthor
Koshida, NobuyoshiAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.010104Search in ResearchGate
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Mindat Ref. ID15036722Long-form Identifiermindat:1:5:15036722:4
GUID0
Full ReferenceOhta, Toshiyuki, Gelloz, Bernard, Koshida, Nobuyoshi (2011) Counter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4Solution from Nanosilicon Emitter. Japanese Journal of Applied Physics, 50 (1) 10104 doi:10.7567/jjap.50.010104
Plain TextOhta, Toshiyuki, Gelloz, Bernard, Koshida, Nobuyoshi (2011) Counter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4Solution from Nanosilicon Emitter. Japanese Journal of Applied Physics, 50 (1) 10104 doi:10.7567/jjap.50.010104
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Ohta, Toshiyuki, Gelloz, Bernard, Koshida, Nobuyoshi (2011) Counter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4Solution from Nanosilicon Emitter. Japanese Journal of Applied Physics, 50. 10104 doi:10.1143/jjap.50.010104
Ohta, Toshiyuki, Gelloz, Bernard, Koshida, Nobuyoshi (2011) Multilayered Thin Metal Film Deposition by Sequential Operation of Nanosilicon Electron Emitter in Metal–Salt Solutions. Japanese Journal of Applied Physics, 50 (6) 6 doi:10.7567/jjap.50.06gg03
Ohta, Toshiyuki, Gelloz, Bernard, Koshida, Nobuyoshi (2011) Multilayered Thin Metal Film Deposition by Sequential Operation of Nanosilicon Electron Emitter in Metal–Salt Solutions. Japanese Journal of Applied Physics, 50 (6) 6 doi:10.1143/jjap.50.06gg03
Koshida, Nobuyoshi, Ohta, Toshiyuki, Gelloz, Bernard (2007) Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect. Applied Physics Letters, 90 (16). 163505pp. doi:10.1063/1.2724890
Koshida, Nobuyoshi, Ohta, Toshiyuki, Hirano, Yoshiyuki, Mentek, Romain, Gelloz, Bernard (2011) Functional Device Applications of Nanosilicon. Key Engineering Materials, 470. 20-26 doi:10.4028/www.scientific.net/kem.470.20
Nakajima, Yoshiki, Uchida, Tetsuya, Toyama, Hajime, Kojima, Akira, Gelloz, Bernard, Koshida, Nobuyoshi (2004) A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation. Japanese Journal of Applied Physics, 43 (4) 2076-2079 doi:10.1143/jjap.43.2076
Mentek, Romain, Gelloz, Bernard, Koshida, Nobuyoshi (2012) Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bp05
Gelloz, Bernard, Sato, Masataka, Koshida, Nobuyoshi (2008) Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device. Japanese Journal of Applied Physics, 47 (4) 2902-2905 doi:10.1143/jjap.47.2902
Gelloz, Bernard, Kanda, Takayuki, Uchida, Tetsuya, Niibe, Masao, Kojima, Akira, Koshida, Nobuyoshi (2005) Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes. Japanese Journal of Applied Physics, 44 (4) 2676-2679 doi:10.1143/jjap.44.2676
Gelloz, Bernard, Koshida, Nobuyoshi (2004) High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer. Japanese Journal of Applied Physics, 43 (4) 1981-1985 doi:10.1143/jjap.43.1981
Mentek, Romain, Gelloz, Bernard, Koshida, Nobuyoshi (2012) Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bp05
 
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