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Saito, Eiji, Filimonov, Sergey N., Suemitsu, Maki (2011) Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane. Japanese Journal of Applied Physics, 50 (1) 10203 doi:10.7567/jjap.50.010203

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Reference TypeJournal (article/letter/editorial)
TitleGrowth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
JournalJapanese Journal of Applied Physics
AuthorsSaito, EijiAuthor
Filimonov, Sergey N.Author
Suemitsu, MakiAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.010203Search in ResearchGate
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Mindat Ref. ID15036733Long-form Identifiermindat:1:5:15036733:0
GUID0
Full ReferenceSaito, Eiji, Filimonov, Sergey N., Suemitsu, Maki (2011) Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane. Japanese Journal of Applied Physics, 50 (1) 10203 doi:10.7567/jjap.50.010203
Plain TextSaito, Eiji, Filimonov, Sergey N., Suemitsu, Maki (2011) Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane. Japanese Journal of Applied Physics, 50 (1) 10203 doi:10.7567/jjap.50.010203
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Saito, Eiji, Filimonov, Sergey N., Suemitsu, Maki (2011) Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane. Japanese Journal of Applied Physics, 50. 10203 doi:10.1143/jjap.50.010203
Saito, Eiji, Filimonov, Sergey, Suemitsu, Maki (2010) Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane. Materials Science Forum, 645. 147-150 doi:10.4028/www.scientific.net/msf.645-648.147
Sambonsuge, Shota, Saito, Eiji, Jung, Myung Ho, Fukidome, Hirokazu, Filimonov, Sergey, Suemitsu, Maki (2013) Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy. Materials Science Forum, 740. 339-343 doi:10.4028/www.scientific.net/msf.740-742.339
Narita, Yuzuru, Konno, Atsushi, Nakazawa, Hideki, Itoh, Takashi, Yasui, Kanji, Endoh, Tetsuo, Suemitsu, Maki (2007) Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l40
Suemitsu, Maki, Sanbonsuge, Shota, Saito, Eiji, Jung, Myung Ho, Fukidome, Hirokazu, Filimonov, Sergey (2013) High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon. Materials Science Forum, 740. 327-330 doi:10.4028/www.scientific.net/msf.740-742.327
Imaizumi, Kei, Handa, Hiroyuki, Takahashi, Ryota, Saito, Eiji, Fukidome, Hirokazu, Enta, Yoshiharu, Teraoka, Yuden, Yoshigoe, Akitaka, Suemitsu, Maki (2011) Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface. Japanese Journal of Applied Physics, 50 (7) 70105 doi:10.7567/jjap.50.070105
Nakazawa, Hideki, Suemitsu, Maki (2001) Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C–SiC/Si(100) heteroepitaxy. Applied Physics Letters, 79 (6). 755-757 doi:10.1063/1.1390476
Fukidome, Hirokazu, Miyamoto, Yu, Handa, Hiroyuki, Saito, Eiji, Suemitsu, Maki (2010) Epitaxial Growth Processes of Graphene on Silicon Substrates. Japanese Journal of Applied Physics, 49 (1) 1 doi:10.1143/jjap.49.01ah03
Takahashi, Ryota, Handa, Hiroyuki, Abe, Shunsuke, Imaizumi, Kei, Fukidome, Hirokazu, Yoshigoe, Akitaka, Teraoka, Yuden, Suemitsu, Maki (2011) Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate. Japanese Journal of Applied Physics, 50 (7) 70103 doi:10.7567/jjap.50.070103
Imaizumi, Kei, Handa, Hiroyuki, Takahashi, Ryota, Saito, Eiji, Fukidome, Hirokazu, Enta, Yoshiharu, Teraoka, Yuden, Yoshigoe, Akitaka, Suemitsu, Maki (2011) Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface. Japanese Journal of Applied Physics, 50 (7) 70105 doi:10.1143/jjap.50.070105
Kitabatake, Hirotatsu, Suemitsu, Maki, Kitahata, Hiroya, Nakajima, Setsuo, Uehara, Tsuyoshi, Toyoshima, Yasutake (2005) Incubation-Free Growth of Polycrystalline Si Films by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Discharge under Near Atmospheric Pressure. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l683
 
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