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Fukidome, Hirokazu, Miyamoto, Yu, Handa, Hiroyuki, Saito, Eiji, Suemitsu, Maki (2010) Epitaxial Growth Processes of Graphene on Silicon Substrates. Japanese Journal of Applied Physics, 49 (1) 1 doi:10.1143/jjap.49.01ah03

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Growth Processes of Graphene on Silicon Substrates
JournalJapanese Journal of Applied Physics
AuthorsFukidome, HirokazuAuthor
Miyamoto, YuAuthor
Handa, HiroyukiAuthor
Saito, EijiAuthor
Suemitsu, MakiAuthor
Year2010 (January 20)Volume49
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.49.01ah03Search in ResearchGate
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Mindat Ref. ID15034657Long-form Identifiermindat:1:5:15034657:1
GUID0
Full ReferenceFukidome, Hirokazu, Miyamoto, Yu, Handa, Hiroyuki, Saito, Eiji, Suemitsu, Maki (2010) Epitaxial Growth Processes of Graphene on Silicon Substrates. Japanese Journal of Applied Physics, 49 (1) 1 doi:10.1143/jjap.49.01ah03
Plain TextFukidome, Hirokazu, Miyamoto, Yu, Handa, Hiroyuki, Saito, Eiji, Suemitsu, Maki (2010) Epitaxial Growth Processes of Graphene on Silicon Substrates. Japanese Journal of Applied Physics, 49 (1) 1 doi:10.1143/jjap.49.01ah03
In(2010, January) Japanese Journal of Applied Physics Vol. 49 (1) Japan Society of Applied Physics

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