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Handa, Hiroyuki, Takahashi, Ryota, Abe, Shunsuke, Imaizumi, Kei, Saito, Eiji, Jung, Myung-Ho, Ito, Shun, Fukidome, Hirokazu, Suemitsu, Maki (2011) Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dh02

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Reference TypeJournal (article/letter/editorial)
TitleTransmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
JournalJapanese Journal of Applied Physics
AuthorsHanda, HiroyukiAuthor
Takahashi, RyotaAuthor
Abe, ShunsukeAuthor
Imaizumi, KeiAuthor
Saito, EijiAuthor
Jung, Myung-HoAuthor
Ito, ShunAuthor
Fukidome, HirokazuAuthor
Suemitsu, MakiAuthor
Year2011 (April 1)Volume50
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.04dh02Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15037995Long-form Identifiermindat:1:5:15037995:1
GUID0
Full ReferenceHanda, Hiroyuki, Takahashi, Ryota, Abe, Shunsuke, Imaizumi, Kei, Saito, Eiji, Jung, Myung-Ho, Ito, Shun, Fukidome, Hirokazu, Suemitsu, Maki (2011) Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dh02
Plain TextHanda, Hiroyuki, Takahashi, Ryota, Abe, Shunsuke, Imaizumi, Kei, Saito, Eiji, Jung, Myung-Ho, Ito, Shun, Fukidome, Hirokazu, Suemitsu, Maki (2011) Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dh02
In(2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics

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Handa, Hiroyuki, Takahashi, Ryota, Abe, Shunsuke, Imaizumi, Kei, Saito, Eiji, Jung, Myung-Ho, Ito, Shun, Fukidome, Hirokazu, Suemitsu, Maki (2011) Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dh02
Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2011) Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process. Japanese Journal of Applied Physics, 50 (7) 70102 doi:10.7567/jjap.50.070102
Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2011) Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process. Japanese Journal of Applied Physics, 50 (7) 70102 doi:10.1143/jjap.50.070102
Sanbonsuge, Shota, Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2012) Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4Pretreatment. Japanese Journal of Applied Physics, 51 (6) 6 doi:10.7567/jjap.51.06fd10
Jung, Myung-Ho, Handa, Hiroyuki, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Tetsuya, Otsuji, Taiichi, Suemitsu, Maki (2011) Investigation of Graphene Field Effect Transistors with Al2O3Gate Dielectrics Formed by Metal Oxidation. Japanese Journal of Applied Physics, 50 (7) 70111 doi:10.7567/jjap.50.070111
Takahashi, Ryota, Handa, Hiroyuki, Abe, Shunsuke, Imaizumi, Kei, Fukidome, Hirokazu, Yoshigoe, Akitaka, Teraoka, Yuden, Suemitsu, Maki (2011) Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate. Japanese Journal of Applied Physics, 50 (7) 70103 doi:10.7567/jjap.50.070103
Sanbonsuge, Shota, Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2012) Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH$_{4}$ Pretreatment. Japanese Journal of Applied Physics, 51. 6 doi:10.1143/jjap.51.06fd10
Imaizumi, Kei, Handa, Hiroyuki, Takahashi, Ryota, Saito, Eiji, Fukidome, Hirokazu, Enta, Yoshiharu, Teraoka, Yuden, Yoshigoe, Akitaka, Suemitsu, Maki (2011) Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface. Japanese Journal of Applied Physics, 50 (7) 70105 doi:10.7567/jjap.50.070105
Jung, Myung-Ho, Handa, Hiroyuki, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Tetsuya, Otsuji, Taiichi, Suemitsu, Maki (2011) Investigation of Graphene Field Effect Transistors with Al2O3Gate Dielectrics Formed by Metal Oxidation. Japanese Journal of Applied Physics, 50 (7) 70111 doi:10.1143/jjap.50.070111
Takahashi, Ryota, Handa, Hiroyuki, Abe, Shunsuke, Imaizumi, Kei, Fukidome, Hirokazu, Yoshigoe, Akitaka, Teraoka, Yuden, Suemitsu, Maki (2011) Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate. Japanese Journal of Applied Physics, 50 (7) 70103 doi:10.1143/jjap.50.070103
Jung, Myung-Ho, Handa, Hiroyuki, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Tetsuya, Otsuji, Taiichi, Suemitsu, Maki (2011) Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications. Japanese Journal of Applied Physics, 50 (7) 70107 doi:10.7567/jjap.50.070107
 
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