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Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2011) Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process. Japanese Journal of Applied Physics, 50 (7) 70102 doi:10.1143/jjap.50.070102

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-Programmed Desorption Observation of Graphene-on-Silicon Process
JournalJapanese Journal of Applied Physics
AuthorsAbe, ShunsukeAuthor
Handa, HiroyukiAuthor
Takahashi, RyotaAuthor
Imaizumi, KeiAuthor
Fukidome, HirokazuAuthor
Suemitsu, MakiAuthor
Year2011 (July 20)Volume50
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.070102Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15038802Long-form Identifiermindat:1:5:15038802:1
GUID0
Full ReferenceAbe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2011) Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process. Japanese Journal of Applied Physics, 50 (7) 70102 doi:10.1143/jjap.50.070102
Plain TextAbe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2011) Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process. Japanese Journal of Applied Physics, 50 (7) 70102 doi:10.1143/jjap.50.070102
In(2011, July) Japanese Journal of Applied Physics Vol. 50 (7) Japan Society of Applied Physics

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Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2011) Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process. Japanese Journal of Applied Physics, 50 (7) 70102 doi:10.7567/jjap.50.070102
Sanbonsuge, Shota, Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2012) Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH$_{4}$ Pretreatment. Japanese Journal of Applied Physics, 51. 6 doi:10.1143/jjap.51.06fd10
Handa, Hiroyuki, Takahashi, Ryota, Abe, Shunsuke, Imaizumi, Kei, Saito, Eiji, Jung, Myung-Ho, Ito, Shun, Fukidome, Hirokazu, Suemitsu, Maki (2011) Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dh02
Sanbonsuge, Shota, Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki (2012) Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4Pretreatment. Japanese Journal of Applied Physics, 51 (6) 6 doi:10.7567/jjap.51.06fd10
Imaizumi, Kei, Handa, Hiroyuki, Takahashi, Ryota, Saito, Eiji, Fukidome, Hirokazu, Enta, Yoshiharu, Teraoka, Yuden, Yoshigoe, Akitaka, Suemitsu, Maki (2011) Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface. Japanese Journal of Applied Physics, 50 (7) 70105 doi:10.1143/jjap.50.070105
Handa, Hiroyuki, Takahashi, Ryota, Abe, Shunsuke, Imaizumi, Kei, Saito, Eiji, Jung, Myung-Ho, Ito, Shun, Fukidome, Hirokazu, Suemitsu, Maki (2011) Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dh02
Takahashi, Ryota, Handa, Hiroyuki, Abe, Shunsuke, Imaizumi, Kei, Fukidome, Hirokazu, Yoshigoe, Akitaka, Teraoka, Yuden, Suemitsu, Maki (2011) Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate. Japanese Journal of Applied Physics, 50 (7) 70103 doi:10.1143/jjap.50.070103
Imaizumi, Kei, Handa, Hiroyuki, Takahashi, Ryota, Saito, Eiji, Fukidome, Hirokazu, Enta, Yoshiharu, Teraoka, Yuden, Yoshigoe, Akitaka, Suemitsu, Maki (2011) Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface. Japanese Journal of Applied Physics, 50 (7) 70105 doi:10.7567/jjap.50.070105
Takahashi, Ryota, Handa, Hiroyuki, Abe, Shunsuke, Imaizumi, Kei, Fukidome, Hirokazu, Yoshigoe, Akitaka, Teraoka, Yuden, Suemitsu, Maki (2011) Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate. Japanese Journal of Applied Physics, 50 (7) 70103 doi:10.7567/jjap.50.070103
Jung, Myung-Ho, Handa, Hiroyuki, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Tetsuya, Otsuji, Taiichi, Suemitsu, Maki (2011) Investigation of Graphene Field Effect Transistors with Al2O3Gate Dielectrics Formed by Metal Oxidation. Japanese Journal of Applied Physics, 50 (7) 70111 doi:10.1143/jjap.50.070111
Jung, Myung-Ho, Handa, Hiroyuki, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Tetsuya, Otsuji, Taiichi, Suemitsu, Maki (2011) Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications. Japanese Journal of Applied Physics, 50 (7) 70107 doi:10.1143/jjap.50.070107
 
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