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Zhang, Jihua, Zhen, Shanxue, Yang, Lijun, Lou, Feizhi, Chen, Hongwei, Yang, Chuanren (2011) Super Smooth Modification of Al2O3Ceramic Substrate by High Temperature Glaze of CaO–Al2O3–SiO2System. Japanese Journal of Applied Physics, 50 (1) 15803 doi:10.7567/jjap.50.015803

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Reference TypeJournal (article/letter/editorial)
TitleSuper Smooth Modification of Al2O3Ceramic Substrate by High Temperature Glaze of CaO–Al2O3–SiO2System
JournalJapanese Journal of Applied Physics
AuthorsZhang, JihuaAuthor
Zhen, ShanxueAuthor
Yang, LijunAuthor
Lou, FeizhiAuthor
Chen, HongweiAuthor
Yang, ChuanrenAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.015803Search in ResearchGate
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Mindat Ref. ID15036764Long-form Identifiermindat:1:5:15036764:4
GUID0
Full ReferenceZhang, Jihua, Zhen, Shanxue, Yang, Lijun, Lou, Feizhi, Chen, Hongwei, Yang, Chuanren (2011) Super Smooth Modification of Al2O3Ceramic Substrate by High Temperature Glaze of CaO–Al2O3–SiO2System. Japanese Journal of Applied Physics, 50 (1) 15803 doi:10.7567/jjap.50.015803
Plain TextZhang, Jihua, Zhen, Shanxue, Yang, Lijun, Lou, Feizhi, Chen, Hongwei, Yang, Chuanren (2011) Super Smooth Modification of Al2O3Ceramic Substrate by High Temperature Glaze of CaO–Al2O3–SiO2System. Japanese Journal of Applied Physics, 50 (1) 15803 doi:10.7567/jjap.50.015803
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Zhang, Jihua, Zhen, Shanxue, Yang, Lijun, Lou, Feizhi, Chen, Hongwei, Yang, Chuanren (2011) Super Smooth Modification of Al2O3Ceramic Substrate by High Temperature Glaze of CaO–Al2O3–SiO2System. Japanese Journal of Applied Physics, 50. 15803 doi:10.1143/jjap.50.015803
Chen, Hongwei, Yang, Chuanren, Zheng, Shanxue, Zhang, Jihua, Zhang, Qiaozhen, Lei, Guanhuan, Lou, Feizhi, Yang, Lijun (2011) Microstructure and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films grown on super smooth glazed-Al2O3 ceramics substrate. Applied Surface Science, 258. 1510-1513 doi:10.1016/j.apsusc.2011.09.117
Zhang, Jihua, Mo, Shangjun, Wang, Huayi, Zhen, Shanxue, Chen, Hongwei, Yang, Chuanren (2011) Microstructure and electrical properties of PLZT ceramics from Pb3O4 as the lead source. Journal of Alloys and Compounds, 509. 2838-2841 doi:10.1016/j.jallcom.2010.11.135
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Leng, Wenjian, Yang, Chuanren, Zhang, Jihua, Chen, Hongwei, Hu, Wencheng, Ji, Hong, Tang, Jinlong, Qin, Wenfeng, Li, Junjian, Lin, Hui, Gao, Lifeng (2007) Nonlinear Optical Properties of the Lanthanum-Modified Lead Zirconate Titanate Ferroelectric Thin Films UsingZ-Scan Technique. Japanese Journal of Applied Physics, 46 (1) doi:10.1143/jjap.46.l7
Chen, Hongwei, Yang, Chuanren, Zhang, Jihua, Pei, Yafang, Zhao, Zhen (2009) Microstructure and antiferroelectric-like behavior of PbxSr1−xTiO3 ceramics. Journal of Alloys and Compounds, 486. 615-620 doi:10.1016/j.jallcom.2009.07.016
Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J. (2011) Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors. Japanese Journal of Applied Physics, 50 (11) 110202 doi:10.7567/jjap.50.110202
Zhang, Jihua, Zhang, Min, Liu, Ying, Yang, Chuanren, Chen, Hongwei, Zhang, Wanli, Li, Yanrong (2011) Two-dimensional Electron Gas Characteristics of Ferroelectric/GaN Heterostructure. Physics Procedia, 18. 21-26 doi:10.1016/j.phpro.2011.06.051
Zhang, Jihua, Yang, Chuanren, Liu, Ying, Zhang, Min, Chen, Hongwei, Zhang, Wanli, Li, Yanrong (2010) Can we enhance two-dimensional electron gas from ferroelectric/GaN heterostructures?. Journal of Applied Physics, 108 (8). 84501pp. doi:10.1063/1.3494040
Chen, Hongwei, Yang, Chuanren, Zhang, Jihua, Wang, Bo, Ji, Hong (2009) Electrical behavior of BaZr0.1Ti0.9O3 and BaZr0.2Ti0.8O3 thin films. Applied Surface Science, 255. 4585-4589 doi:10.1016/j.apsusc.2008.12.003
Chen, Yun-yun, Song, Yang, Li, Zhen-hua, He, An-zhi (2011) Comparison of Fringe Displacement in Moiré Deflection Tomography Diagnosis between Flame and Arc Plasma. Japanese Journal of Applied Physics, 50 (1) 16601 doi:10.7567/jjap.50.016601
 
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