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Takigawa, Yukio, Tarumi, Nobuaki, Shiohara, Morio, Soda, Eiichi, Oda, Noriaki, Ogawa, Shinichi (2011) Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance. Japanese Journal of Applied Physics, 50 (1) 16503 doi:10.7567/jjap.50.016503

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Reference TypeJournal (article/letter/editorial)
TitleNovel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance
JournalJapanese Journal of Applied Physics
AuthorsTakigawa, YukioAuthor
Tarumi, NobuakiAuthor
Shiohara, MorioAuthor
Soda, EiichiAuthor
Oda, NoriakiAuthor
Ogawa, ShinichiAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.016503Search in ResearchGate
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Mindat Ref. ID15036768Long-form Identifiermindat:1:5:15036768:2
GUID0
Full ReferenceTakigawa, Yukio, Tarumi, Nobuaki, Shiohara, Morio, Soda, Eiichi, Oda, Noriaki, Ogawa, Shinichi (2011) Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance. Japanese Journal of Applied Physics, 50 (1) 16503 doi:10.7567/jjap.50.016503
Plain TextTakigawa, Yukio, Tarumi, Nobuaki, Shiohara, Morio, Soda, Eiichi, Oda, Noriaki, Ogawa, Shinichi (2011) Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance. Japanese Journal of Applied Physics, 50 (1) 16503 doi:10.7567/jjap.50.016503
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Takigawa, Yukio, Tarumi, Nobuaki, Shiohara, Morio, Soda, Eiichi, Oda, Noriaki, Ogawa, Shinichi (2011) Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance. Japanese Journal of Applied Physics, 50. 16503 doi:10.1143/jjap.50.016503
Nakamura, Naofumi, Oda, Noriaki, Soda, Eiichi, Aoyama, Hajime, Tanaka, Yuusuke, Kawamura, Daisuke, Hosoi, Nobuki, Takigawa, Yukio, Shiohara, Morio, Kondo, Seiichi, Mori, Ichiro, Saito, Shuichi (2011) Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography. Japanese Journal of Applied Physics, 50 (2) 26504 doi:10.7567/jjap.50.026504
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Maruyama, Koji, Shiohara, Morio, Yamada, Kouji, Kondo, Seiichi, Saito, Shuichi (2009) Galvanic Corrosion Control in Chemical Mechanical Polishing of Cu Interconnects with Ruthenium Barrier Metal Film. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c022
Teramoto, Yoshiyuki, Shiono, Taku, Ono, Ryo, Oda, Tetsuji (2011) Surface Treatment of TiO2Electrode for Dye-Sensitized Solar Cells Using Low-Temperature and Low-Energy Dielectric Barrier Discharge in Air. Japanese Journal of Applied Physics, 50 (3) 36201 doi:10.7567/jjap.50.036201
Sari, Windu, Eom, Tae-Kwang, Choi, Sang-Hyeok, Kim, Soo-Hyun (2011) Ru/WNxBilayers as Diffusion Barriers for Cu Interconnects. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05ea08
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Yoshida, Takehito, Ogawa, Shinichi, Miyajima, Akio, Yano, Kousaku (1994) A Low Parasitic Capacitance Scheme by Thermally Stable Titanium Silicide Technology for High Speed Complementary-Metal-Oxide-Semiconductor. Japanese Journal of Applied Physics, 33. 480-485 doi:10.1143/jjap.33.480
 
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