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Hettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji (2011) Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pb04

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Reference TypeJournal (article/letter/editorial)
TitleBehavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations
JournalJapanese Journal of Applied Physics
AuthorsHettiarachchi, RangaAuthor
Matsuki, TakeoAuthor
Feng, WeiAuthor
Yamada, KeisakuAuthor
Ohmori, KenjiAuthor
Year2011 (October 20)Volume50
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.10pb04Search in ResearchGate
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Mindat Ref. ID15037009Long-form Identifiermindat:1:5:15037009:5
GUID0
Full ReferenceHettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji (2011) Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pb04
Plain TextHettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji (2011) Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pb04
In(2011, October) Japanese Journal of Applied Physics Vol. 50 (10) Japan Society of Applied Physics

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Hettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji (2011) Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pb04
Matsuki, Takeo, Hettiarachchi, Ranga, Feng, Wei, Shiraishi, Kenji, Yamada, Keisaku, Ohmori, Kenji (2011) Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO$_{2}$/SiO$_{2}$ Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pb02
Matsuki, Takeo, Hettiarachchi, Ranga, Feng, Wei, Shiraishi, Kenji, Yamada, Keisaku, Ohmori, Kenji (2011) Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pb02
Feng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji (2012) Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dc06
Feng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji (2012) Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc06
Tsuchiya, Toshiaki, Matsuura, Takashi, Murota, Junichi (2001) Low-Frequency Noise in Si1-xGexp-Channel Metal Oxide Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 40. 5290-5293 doi:10.1143/jjap.40.5290
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Gaubert, Philippe, Teramoto, Akinobu, Kuroda, Rihito, Nakao, Yukihisa, Tanaka, Hiroaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2011) Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dc01
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Chen, Yu-Ting, Chen, Kun-Ming, Liao, Wen-Shiang, Huang, Guo-Wei, Huang, Fon-Shan (2009) Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNxStressing Layer. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c042
 
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