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Feng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji (2012) Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc06

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Reference TypeJournal (article/letter/editorial)
TitleAdvantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties
JournalJapanese Journal of Applied Physics
AuthorsFeng, WeiAuthor
Hettiarachchi, RangaAuthor
Sato, SoshiAuthor
Kakushima, KuniyukiAuthor
Niwa, MasaakiAuthor
Iwai, HiroshiAuthor
Yamada, KeisakuAuthor
Ohmori, KenjiAuthor
Year2012 (April 1)Volume51
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.04dc06Search in ResearchGate
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Mindat Ref. ID15042543Long-form Identifiermindat:1:5:15042543:6
GUID0
Full ReferenceFeng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji (2012) Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc06
Plain TextFeng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji (2012) Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc06
In(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics

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Feng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji (2012) Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dc06
Sato, Soshi, Kakushima, Kuniyuki, Ohmori, Kenji, Natori, Kenji, Yamada, Keisaku, Iwai, Hiroshi (2011) Electrical characteristics of asymmetrical silicon nanowire field-effect transistors. Applied Physics Letters, 99 (22). 223518pp. doi:10.1063/1.3665261
Sato, Soshi, Li, Wei, Kakushima, Kuniyuki, Ohmori, Kenji, Natori, Kenji, Yamada, Keisaku, Iwai, Hiroshi (2011) Extraction of additional interfacial states of silicon nanowire field-effect transistors. Applied Physics Letters, 98 (23). 233506pp. doi:10.1063/1.3598402
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Hettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji (2011) Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pb04
Matsuki, Takeo, Hettiarachchi, Ranga, Feng, Wei, Shiraishi, Kenji, Yamada, Keisaku, Ohmori, Kenji (2011) Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO$_{2}$/SiO$_{2}$ Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pb02
Lee, Yeonghun, Kakushima, Kuniyuki, Natori, Kenji, Iwai, Hiroshi (2015) Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 118 (15). 155105pp. doi:10.1063/1.4933287
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