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(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics

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Reference TypeJournal (issue)
JournalJapanese Journal of Applied Physics
Year2012 (April)Volume51
Issue<   4   >
PublisherJapan Society of Applied Physics
Mindat Ref. ID15042441Long-form Identifiermindat:1:5:15042441:5
GUID0
Full Reference(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics
Plain Text(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics
In(2012) Japanese Journal of Applied Physics Vol. 51. Japan Society of Applied Physics

Contains

Chen, Yi-Yueh, Chien, Wei-Chih, Lee, Ming-Hsiu, Chen, Yi-Chou, Chuang, Alfred T. H., Hong, Tian-Jue, Lin, Su-Jien, Wu, Tai-Bor, Lu, Chih-Yuan (2012) Evaluation of the WOxFilm Properties for Resistive Random Access Memory Application. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd15
Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd16
Jana, Debanjan, Maikap, Siddheswar, Tien, Ta Chang, Lee, Heng Yuan, Chen, Wei-Su, Chen, Frederick T., Kao, Ming-Jer, Tsai, Ming-Jinn (2012) Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd17
Ishikawa, Tomohiro, Lee, Jaesung, Miyake, Ryo (2012) Manipulation of Dispersed Magnetic Beads for On-Chip Immunoassay. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de01
Matsumoto, Takashi, Makino, Hiroaki, Kobayashi, Kazutoshi, Onodera, Hidetoshi (2012) Multicore Large-Scale Integration Lifetime Extension by Negative Bias Temperature Instability Recovery-Based Self-Healing. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de02
Ansari, Tania, Imafuku, Wataru, Yasuda, Masahiro, Mattausch, Hans Jürgen, Koide, Tetsushi (2012) Experimental Analysis of Within-Die Process Variation in 65 and 180 nm Complementary Metal–Oxide–Semiconductor Technology Including Its Distance Dependences. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de03
Kamimura, Tatsuya, Lee, Sang-yeop, Tanoi, Satoru, Ito, Hiroyuki, Ishihara, Noboru, Masu, Kazuya (2012) 0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de04
Sasaki, Seiryu, Yasuda, Masahiro, Kawabata, Akio, Koide, Tetsushi, Mattausch, Hans Jürgen (2012) High Speed Frequency-Mapping-Based Associative Memory Using Compact Multi-Bit Encoders and a Path-Selecting Scheme. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de05
Sasaki, Yuki, Kotani, Koji (2012) Postfabrication Independent Inductance and Quality Factor Adjustments of On-Chip Inductors by Above-CMOS Processing for Rapid Prototyping of Radio Frequency System on Chips. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de06
Dharmiza, Dayang Nur Salmi, Oturu, Mototada, Tanoi, Satoru, Ito, Hiroyuki, Ishihara, Noboru, Masu, Kazuya (2012) An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de07
Kim, Boram, Uno, Shigeyasu, Nakazato, Kazuo (2012) Wireless Charge Based Capacitance Measurement Circuits with On-Chip Spiral Inductor for Radio Frequency Identification Biosensor. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de08
Han, Sang-Kug, Choi, Hoon, Moon, Kyo-Ho, Choi, Young-Seok, Jeong, Kyung-Deuk, Park, Kwang-Mook, Choi, Sie-Young (2012) An Integrated Amorphous Silicon Gate Driver Circuit Using Voltage-Controlled Capacitance Modeling for High Definition Television. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de09
Zhang, Renyuan, Shibata, Tadashi (2012) Fully Parallel Self-Learning Analog Support Vector Machine Employing Compact Gaussian Generation Circuits. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de10
Tanoi, Satoru, Endoh, Tetsuo (2012) A Wide-Range Tunable Level-Keeper Using Vertical Metal–Oxide–Semiconductor Field-Effect Transistors for Current-Reuse Systems. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04de11
Hoshi, Takuya, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru (2012) Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04df01
Zhou, Qi, Chen, Hongwei, Zhou, Chunhua, Feng, Zhihong, Cai, Shujun, Chen, Kevin J. (2012) Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04df02
Kambayashi, Hiroshi, Nomura, Takehiko, Kato, Sadahiro, Ueda, Hirokazu, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) High Integrity SiO2Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04df03
Honda, Unhi, Yamada, Yujiro, Tokuda, Yutaka, Shiojima, Kenji (2012) Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04df04
Ito, Yuka, Terada, Shinsuke, Arai, Shinya, Fujiwara, Makoto, Mori, Tetsuya, Choki, Koji, Fukushima, Takafumi, Koyanagi, Mitsumasa (2012) Impact of Data Transmission over 10 Gbps on High-Density and Low-Cost Optoelectronic Module with Polynorbornene Waveguides. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg01
Chen, Cheng-Chang, Chiu, Ching-Hsueh, Tu, Po-Min, Kuo, Ming-Yen, Shih, M. H., Huang, Ji-Kai, Kuo, Hao-Chung, Zan, Hsiao-Wen, Chang, Chun-Yen (2012) Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg02
Hattori, Tatsumi, Kubo, Atsushi, Oguri, Katsuya, Nakano, Hidetoshi, Miyazaki, Hideki T. (2012) Femtosecond Laser-Excited Two-Photon Fluorescence Microscopy of Surface Plasmon Polariton. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg03
Taira, Yuta, Kita, Tomohiro, Teraoka, Edgar Yoshio Morales, Yamada, Hirohito (2012) Analysis of Phase Matching Conditions for Generating Second Harmonic in ZnO Channel Waveguides. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg04
Katoh, Sho, Takimoto, Toshikazu, Nakagawa, Yoshinori, Morita, Ken, Kitada, Takahiro, Isu, Toshiro (2012) Terahertz Radiation from a (113)B GaAs/AlAs Coupled Multilayer Cavity Generated by Ultrashort Laser Pulse Excitation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg05
Ueyama, Hyuga, Takahashi, Tomoya, Nakagawa, Yoshinori, Morita, Ken, Kitada, Takahiro, Isu, Toshiro (2012) GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg06
Amemiya, Yoshiteru, Furutani, Ryuichi, Fukuyama, Masataka, Yokoyama, Shin (2012) Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg07
Makihara, Katsunori, Deki, Hidenori, Ikeda, Mitsuhisa, Miyazaki, Seiichi (2012) Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg08
Tani, Kazuki, Saito, Shin-ichi, Lee, Yong, Oda, Katsuya, Mine, Toshiyuki, Sugawara, Toshiki, Ido, Tatemi (2012) Light Detection and Emission in Germanium-on-Insulator Diodes. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg09
Oda, Katsuya, Tani, Kazuki, Saito, Shin-ichi, Okumura, Tadashi, Ido, Tatemi (2012) Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg10
Chiu, Ching-Hsueh, Tu, Po-Min, Chang, Shih-Pang, Lin, Chien-Chung, Jang, Chung-Ying, Li, Zhen-Yu, Yang, Hung-Chih, Zan, Hsiao-Wen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Chang, Chun-Yen (2012) Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2Nanorod-Array Depth Patterned Sapphire Substrate. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg11
Furuya, Katsumi, Takei, Ryohei, Kamei, Toshihiro, Sakakibara, Youichi, Mori, Masahiko (2012) Basic Study of Coupling on Three-Dimensional Crossing of Si Photonic Wire Waveguide for Optical Interconnection on Inter or Inner Chip. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg12
Bousslama, Wiem, Elhouichet, Habib, Gelloz, Bernard, Sieber, Brigitte, Addad, Ahmed, Moreau, Myriam, Férid, Mokhtar, Koshida, Nobuyoshi (2012) Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg13
Taue, Shuji, Matsumoto, Yoshiki, Fukano, Hideki, Tsuruta, Kenji (2012) Experimental Analysis of Optical Fiber Multimode Interference Structure and its Application to Refractive Index Measurement. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg14
Chen, Chin-Hsiang, Tsai, Chia-Ming, Cheng, Chung-Fu, Yen, Shuo-Fu, Su, Peng-Yin, Tsai, Yu-Hsuan, Tsai, Cheng-Nan (2012) GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg15
Shojiki, Kanako, Hanada, Takashi, Shimada, Takaaki, Liu, Yuhuai, Katayama, Ryuji, Matsuoka, Takashi (2012) Tilted Domain and Indium Content of InGaN Layer onm-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dh01
Iwabuchi, Takuya, Liu, Yuhuai, Kimura, Takeshi, Zhang, Yuantao, Prasertsuk, Kiattiwut, Watanabe, Haruna, Usami, Noritaka, Katayama, Ryuji, Matsuoka, Takashi (2012) Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dh02
Nakajima, Anri, Kuroki, Shin-Ichiro, Fujii, Shuntaro, Ito, Takashi (2012) In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dh03
Sugawa, Kosuke, Sakai, Tatsuya, Tanaka, Daido, Akiyama, Tsuyoshi (2012) Tuning Optical Properties of Two-Dimensional Ordered Arrays of Silica/Gold and Silver Core/Shell Structured Nanoparticles in Near-Infrared Region. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dh04
Mori, Nobuya, Minari, Hideki, Uno, Shigeyasu, Mizuta, Hiroshi, Koshida, Nobuyoshi (2012) Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dj01
Kil, Gyu-Hyun, Yang, Hyung-Jun, Lee, Gae-Hun, Lee, Seong-Hyun, Song, Yun-Heub (2012) Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dj02
Liao, Min, Ishiwara, Hiroshi, Ohmi, Shun-ichiro (2012) Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk01
Matsui, Tatsunosuke, Kitaguchi, Masahiro (2012) Finite-Difference Time-Domain Analysis of Twist-Defect-Mode Lasing Dynamics in Cholesteric Photonic Liquid Crystal. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk02
Nakanishi, Yuta, Kajii, Hirotake, Tamura, Koki, Ohmori, Yutaka (2012) 6,13-Bis(triisopropylsilylethynyl) Pentacene Organic Field-Effect Transistors Utilizing Poly(p-silsesquioxane) Insulating Layers with Various Ratios of Phenol Groups. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk03
Reséndiz, Luis, Estrada, Magali, Cerdeira, Antonio, Cabrera, Víctor (2012) Analysis of the Performance of an Inverter Circuit: Varying the Thickness of the Active Layer in Polymer Thin Film Transistors with Circuit Simulation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk04
Kuroda, Yusuke, Koshiba, Yasuko, Misaki, Masahiro, Horie, Satoshi, Ishida, Kenji, Ueda, Yasukiyo (2012) Structural and Ferroelectric Characterization of Uniaxially Oriented Vinylidene Fluoride Oligomer Thin Films. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk05
Wu, Chung-Ming, Su, Shui-Hsiang, Weng, Wei-Chih, Tsai, Hsiang-Lin, Yokoyama, Meiso (2012) Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting StackedN,N'-Diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk06
Okada, Akinori, Fukaya, Yoshihide, Hotta, Shu, Yamao, Takeshi (2012) Light-Emitting Field-Effect Transistors Having Metal Electrodes Modified with an Organic Thin Film. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk07
Morales, Crisóforo, Kojima, Nobuaki, Nishi, Seiji, Yamaguchi, Masafumi (2012) Structural and Molecular Changes of C60Thin Films with Incorporated Magnesium Atoms. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk08
Yamada, Ichiko, Umeda, Masashi, Hayashi, Yasuhiko, Soga, Tetsuo, Shibata, Norio (2012) Fundamental Study on Organic Solar Cells Based on Soluble Zinc Phthalocyanine. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk09
Inoue, Kei, Akiyama, Tsuyoshi, Suzuki, Atsushi, Oku, Takeo (2012) Organic Solar Cells Based on Electrodeposited Polyaniline Films. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dk10
Majeed, Bivragh, Jones, Ben, Tezcan, Deniz S., Tutunjyan, Nina, Haspeslagh, Luc, Peeters, Sara, Fiorini, Paolo, Beeck, Maaike Op de, Hoof, Chris Van, Hiraoka, Maki, Tanaka, Hiroyuki, Yamashita, Ichiro (2012) Silicon Based System for Single-Nucleotide-Polymorphism Detection: Chip Fabrication and Thermal Characterization of Polymerase Chain Reaction Microchamber. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dl01
Tanaka, Hiroyuki, Fiorini, Paolo, Peeters, Sara, Majeed, Bivragh, Sterken, Tom, Beeck, Maaike Op de, Hayashi, Miho, Yaku, Hidenobu, Yamashita, Ichiro (2012) Sub-micro-liter Electrochemical Single-Nucleotide-Polymorphism Detector for Lab-on-a-Chip System. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dl02
Hasebe, Takayuki, Yamada, Yuki, Tabata, Hitoshi (2012) Analysis of Sharp Dip Structures on Terahertz Transmission Spectra of Metallic Meshes. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dl03
Nonaka, Shun, Kunihashi, Yoji, Kohda, Makoto, Nitta, Junsaku (2012) Anisotropic Weak Anti-Localization under In-Plane Magnetic Field and Control of Dimensionality via Spin Precession Length. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm01
Suzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm02
Lim, Hyein, Ahn, Sora, Lee, Seungjun, Shin, Hyungsoon (2012) Physics-Based SPICE Model of Spin-Torque Oscillators. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm03
Demiray, Ahmet S., Miyawaki, Tetsuya, Watanabe, Yusuke, Kohda, Makoto, Saito, Kesami, Mitani, Seiji, Takanashi, Koki, Nitta, Junsaku (2012) Relative Vortex State Control in a Co/Cu/Co Pseudo-Spin-Valve Ring. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm04
Nakanishi, Sota, Sasayama, Kazutoshi, Oyanagi, Yoshitsugu, Yamaguchi, Ryo, Lu, Shulong, Li, Lianhe, Fiore, Andrea, Tackeuchi, Atsushi (2012) Temperature Dependence of Spin Relaxation Time in InAs Columnar Quantum Dots at 10 to 150 K. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm05
Hirai, Daisuke, Yamamoto, Takahiro, Watanabe, Satoshi (2012) Diameter Dependence of Sub-Terahertz AC Response of Metallic Carbon Nanotubes with a Single Atomic Vacancy. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dn01
Ago, Hiroki, Kayo, Yasumichi, Tsuji, Masaharu (2012) Growth of Horizontally-Aligned Single-Walled Carbon Nanotubes on Sapphire Surface by Needle-Scratching Method. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dn02
Nakamura, Atsushi, Miyasaka, Yuta, Temmyo, Jiro (2012) Direct Growth Properties of Graphene Layers on Sapphire Substrate by Alcohol-Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dn03
Kwon, Taesoo, An, Hyosub, Seo, Young-Soo, Jung, Jongwan (2012) Plasma Treatment to Improve Chemical Vapor Deposition-Grown Graphene to Metal Electrode Contact. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dn04
Wei, Xiaojun, Aoki, Nobuyuki, Yahagi, Tatsurou, Maeda, Kenji, Bird, Jonathan P., Ishibashi, Koji, Ochiai, Yuichi (2012) Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dn05
Du, Weijie, Saito, Takanobu, Khan, Muhammad Ajmal, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2012) Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2Overlayers. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp01
Ashida, Youichi, Takahashi, Shigeki, Shiraki, Satoshi, Tokura, Norihito, Nakagawa, Akio (2012) Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp02
Shiraki, Satoshi, Takahashi, Shigeki, Yamada, Akira, Yamamoto, Masahiro, Senda, Koji, Ashida, Youichi, Hiruma, Atsuyuki, Tokura, Norihito (2012) High Voltage and High Reliability Silicon-on-Insulator Power IC Technologies and Their Application to 750 V 4.5 A Micro-Inverter IC. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp03
Han, Ming-Hung, Chen, Hung-Bin, Chang, Chia-Jung, Wu, Jia-Jiun, Chen, Wen-Chong, Tsai, Chi-Chong, Chang, Chun-Yen (2012) A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp04
Machida, Satoru, Kikuchi, Naoto, Segawa, Tsutomu, Shimo, Yuichi, Kobayashi, Masashi (2012) Reduction of Power Loss of Zero Current Switching Converter by Optimizing Power Devices. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp05
Arafune, Koji, Miki, Shohei, Matsutani, Ryosuke, Hamano, Junpei, Yoshida, Haruhiko, Tachibana, Tomihisa, Lee, Hyun Ju, Ogura, Atsuhi, Ohshita, Yoshio, Satoh, Shin-ichi (2012) Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlOx. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp06
Tsai, Tzong-Han, Wu, Yung-Chun, Yang, Shih-Sian, Chen, Chun-Hao (2012) Optimization of Amorphous Si/Crystalline Si Heterojunction Solar Cells by BF2Ion Implantation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp07
He, Yandong, Zhang, Ganggang (2012) Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp08
Okuda, Takafumi, Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun (2012) Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp09
Oniki, Yusuke, Ueno, Tomo (2012) Water-Related Hole Traps at Thermally Grown GeO2–Ge Interface. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da01
Hirano, Izumi, Saitoh, Masumi, Numata, Toshinori, Mitani, Yuichiro (2012) Characteristics of Defect Generation and Breakdown in SiO2for Polycrystalline Silicon Channel Field-Effect Transistor. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da02
Zhao, Dan Dan, Lee, Choong Hyun, Nishimura, Tomonori, Nagashio, Kosuke, Cheng, Guo An, Toriumi, Akira (2012) Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da03
Takei, Munehisa, Hashiguchi, Hiroki, Yamaguchi, Takuya, Kosemura, Daisuke, Nagata, Kohki, Ogura, Atsushi (2012) Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da04
Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Kamei, Takahiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku (2012) Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da05
Lee, DongHun, Kubo, Kazuki, Kanashima, Takeshi, Okuyama, Masanori (2012) Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da06
Seki, Hiroshi, Shibuya, Yasuhiro, Kobayashi, Daisuke, Nohira, Hiroshi, Yasuoka, Kenji, Hirose, Kazuyuki (2012) Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da07
Sato, Motonobu, Inukai, Manabu, Ikenaga, Eiji, Muro, Takayuki, Ogawa, Shuichi, Takakuwa, Yuji, Nakano, Haruhisa, Kawabata, Akio, Nihei, Mizuhisa, Yokoyama, Naoki (2012) Fabrication of Graphene Directly on SiO2without Transfer Processes by Annealing Sputtered Amorphous Carbon. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db01
Chen, Hong-Yu, Lin, Albert, Liyanage, Luckshitha Suriyasena, Beasley, Cara, Patil, Nishant, Wei, Hai, Mitra, Subhasish, Wong, H.-S. Philip (2012) Single-Tube Characterization Methodology for Experimental and Analytical Evaluation of Carbon Nanotube Synthesis. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db02
Zhang, Lin, Lim, Dau Fatt, Li, Hong Yu, Gao, Shan, Tan, Chuan Seng (2012) Through Silicon Via Fabrication with Low-κ Dielectric Liner and Its Implications on Parasitic Capacitance and Leakage Current. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db03
Shuto, Takanori, Watanabe, Naoya, Ikeda, Akihiro, Asano, Tanemasa (2012) Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db04
Kodera, Masako, Yoshimizu, Yasuhito, Uchida, Kanae (2012) Potential Characterization of Interconnect Corrosion by Kelvin Probe and Electrostatic Force Microscopies. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db05
Ito, Kazuhiro, Kohama, Kazuyuki, Hamasaka, Keiji, Sonobayashi, Yutaka, Sasaki, Nobuharu, Shirai, Yasuharu, Murakami, Masanori (2012) Oxygen-Induced Barrier Failure in Ti-Based Self-Formed and Ta/TaN Barriers for Cu Interconnects. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db06
Kishii, Sadahiro, Nakamura, Ko, Hanawa, Kenzo, Watanabe, Satoru, Arimoto, Yoshihiro, Kurokawa, Syuhei, Doi, Toshiro K. (2012) Mn2O3Slurry Reuse by Circulation Achieving High Constant Removal Rate. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db07
Shi, Hongbin, Tian, Cuihua, Ueda, Toshitsugu (2012) Board-Level Solder Joint Reliability of Edge- and Corner-Bonded Lead-Free Chip Scale Package Assemblies Subjected to Thermal Cycling. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04db08
Mizuno, Tomohisa, Takehi, Juria, Tanabe, Shou (2012) Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O+Ion Implantation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc01
Inatsuka, Takuya, Kumagai, Yuki, Kuroda, Rihito, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc02
Sun, Min-Chul, Kim, Sang Wan, Kim, Hyun Woo, Kim, Garam, Kim, Hyungjin, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook (2012) Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultralow-Power Logic Circuits. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc03
Kim, Sung Hwan, Bae, Hyun Jun, Oh, Chang Woo, Kim, Dong-Won, Yamada, Satoru, Jin, Gyoyoung, Roh, Yonghan (2012) Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc04
Ishikawa, Takayuki, Saitoh, Masumi, Ota, Kensuke, Tanaka, Chika, Numata, Toshinori (2012) Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc05
Feng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji (2012) Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc06
Gaubert, Philippe, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc07
Li, Yiming, Cheng, Hui-Wen (2012) Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dc08
Zhang, Xizhen, Takahashi, Mitsue, Takeuchi, Ken, Sakai, Shigeki (2012) 64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd01
Miyaji, Kousuke, Shinozuka, Yasuhiro, Takeuchi, Ken (2012) Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-Side Assisted Erase Scheme Using Minimum Channel Length/Width Standard Complemental Metal–Oxide–Semiconductor Single Transistor Cell. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd02
Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku (2012) Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd03
Kusai, Haruka, Morota, Misako, Oda, Masato, Fujii, Shosuke, Sakuma, Kiwamu, Koyama, Masato (2012) Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd04
Liu, Sheng-Hsien, Yang, Wen-Luh, Hsiao, Yu-Ping, Chao, Tien-Sheng (2012) Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH3-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd05
Prakash, Amit, Maikap, Siddheswar, Lai, Chao Sung, Lee, Heng Yuan, Chen, W. S., Chen, Frederick T., Kao, Ming Jer, Tsai, Ming Jinn (2012) Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd06
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd07
Zhang, Feifei, Li, Xiang, Gao, Bin, Chen, Bing, Huang, Peng, Fu, Yihan, Chen, Yuansha, Liu, Lifeng, Kang, Jinfeng, Singh, Navab, Guo-Qiang, Lo, Kwong, Dim-Lee (2012) Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd08
Huang, Jiun-Jia, Hou, Tuo-Hung, Hsu, Chung-Wei, Tseng, Yi-Ming, Chang, Wen-Hsiung, Jang, Wen-Yueh, Lin, Chen-Hsi (2012) Flexible One Diode–One Resistor Crossbar Resistive-Switching Memory. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd09
Banerjee, Writam, Rahaman, Sk. Ziaur, Maikap, Siddheswar (2012) Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd10
Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Ray, Samit Kumar, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T., Kao, Ming-Jer, Tsai, Ming-Jinn (2012) Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd11
Miyaji, Kousuke, Hung, Chinglin, Takeuchi, Ken (2012) Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd12
Matsuo, Naoto, Takagi, Shyogo, Yamana, Kazushige, Heya, Akira, Takada, Tadao, Yokoyama, Shin (2012) Electrical Property of DNA Field-Effect Transistor: Charge Retention Property. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd13
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd14
Endo, Morinobu (2012) Carbon Nanotube Research: Past and Future. Japanese Journal of Applied Physics, 51 (4) 40001 doi:10.7567/jjap.51.040001
Yoo, Young Bum, Park, Jee Ho, Lee, Se Jong, Song, Kie Moon, Baik, Hong Koo (2012) Low-Temperature, Solution-Processed Zinc Tin Oxide Thin-Film Transistors Fabricated by Thermal Annealing and Microwave Irradiation. Japanese Journal of Applied Physics, 51 (4) 40201 doi:10.7567/jjap.51.040201
Kimura, Tsunehisa, Song, Guangjie, Matsumoto, Kenji, Fujita, Keiji, Kimura, Fumiko (2012) Determination of Anisotropic Diamagnetic Susceptibility Using X-ray Diffraction. Japanese Journal of Applied Physics, 51 (4) 40202 doi:10.7567/jjap.51.040202
Masumoto, Keiko, Someno, Tatsuya, Murakami, Kosuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Matsuo, Daisuke, Kitamoto, Akira, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke (2012) The Effects of Ba-Additive on Growth ofa-Plane GaN Single Crystals Using Na Flux Method. Japanese Journal of Applied Physics, 51 (4) 40203 doi:10.7567/jjap.51.040203
Kado, Kosuke, Fuyuki, Takuma, Yamada, Kazuya, Oe, Kunishige, Yoshimoto, Masahiro (2012) High Hole Mobility in GaAs1-xBixAlloys. Japanese Journal of Applied Physics, 51 (4) 40204 doi:10.7567/jjap.51.040204
Wang, Xue-Lun, Takahashi, Tokio (2012) Light Source Position Dependence of Evanescent Wave Coupling Effect in Narrow GaAs/AlGaAs Ridge Structure. Japanese Journal of Applied Physics, 51 (4) 40205 doi:10.7567/jjap.51.040205
Irokawa, Yoshihiro, Víllora, Encarnación A. García, Shimamura, Kiyoshi (2012) Shottky Barrier Diodes on AlN Free-Standing Substrates. Japanese Journal of Applied Physics, 51 (4) 40206 doi:10.7567/jjap.51.040206
Kawaharamura, Toshiyuki, Dang, Giang T., Furuta, Mamoru (2012) Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga2O3Thin Films by Fine-Channel Mist Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51 (4) 40207 doi:10.7567/jjap.51.040207
Nakahama, Masanori, Gu, Xiaodong, Shimada, Toshikazu, Koyama, Fumio (2012) On-Chip High-Resolution Beam Scanner Based on Bragg Reflector Slow-Light Waveguide Amplifier and Tunable Micro-Electro-Mechanical System Vertical Cavity Surface Emitting Laser. Japanese Journal of Applied Physics, 51 (4) 40208 doi:10.7567/jjap.51.040208
Nakahama, Masanori, Sano, Hayato, Nakata, Norihiko, Matsutani, Akihiro, Koyama, Fumio (2012) Giant Wavelength–Temperature Dependence of a Micro Machined Vertical Cavity Surface Emitting Laser with a Thermally Actuated Cantilever Structure. Japanese Journal of Applied Physics, 51 (4) 40209 doi:10.7567/jjap.51.040209
Sakai, Heisuke, Isoda, Hayato, Furukawa, Yukio (2012) Organic Field-Effect-Transistor-Based Memory with Nylon 11 as Gate Dielectric. Japanese Journal of Applied Physics, 51 (4) 40210 doi:10.7567/jjap.51.040210
Wu, Hao, Tang, Lihua, Yang, Yaowen, Soh, Chee Kiong (2012) A Compact 2 Degree-of-Freedom Energy Harvester with Cut-Out Cantilever Beam. Japanese Journal of Applied Physics, 51 (4) 40211 doi:10.7567/jjap.51.040211
Shuto, Yusuke, Yamamoto, Shuu'ichirou, Sugahara, Satoshi (2012) Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions. Japanese Journal of Applied Physics, 51 (4) 40212 doi:10.7567/jjap.51.040212
Liu, Kang-Hung, Shieh, Han-Ping D. (2012) Ultrathin Reflective Flexible Liquid Crystal Display Film. Japanese Journal of Applied Physics, 51 (4) 40213 doi:10.7567/jjap.51.040213
Liu, Chih-Yi, Ho, Jen-Yen, Huang, Jyun-Jie, Wang, Hung-Yu (2012) Transient Current of Resistive Switching of a NiOxResistive Memory. Japanese Journal of Applied Physics, 51 (4) 41101 doi:10.7567/jjap.51.041101
Seong, Tae-Geun, Joung, Mi-Ri, Sun, Jong-Woo, Yang, Min Kyu, Lee, Jeon-Kook, Moon, Ji Won, Roh, Jaesung, Nahm, Sahn (2012) Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications. Japanese Journal of Applied Physics, 51 (4) 41102 doi:10.7567/jjap.51.041102
Xie, Xiaojun, Cheng, Yonghong, Xiao, Bing, Ohki, Yoshimichi (2012) First-Principles Study on Intrinsic Point Defects in Rhombohedral LaAlO3and Their Effects on Electrical Properties. Japanese Journal of Applied Physics, 51 (4) 41103 doi:10.7567/jjap.51.041103
Kabe, Yoshiro, Hasunuma, Ryu, Yamabe, Kikuo (2012) Oxidation of Silicon Utilizing a Microwave Plasma System: Electric-Stress Hardening of SiO2Films by Controlling the Surface and Interface Roughness. Japanese Journal of Applied Physics, 51 (4) 41104 doi:10.7567/jjap.51.041104
Hirano, Izumi, Yamaguchi, Takeshi, Nakasaki, Yasushi, Iijima, Ryosuke, Sekine, Katsuyuki, Takayanagi, Mariko, Eguchi, Kazuhiro, Mitani, Yuichiro (2012) Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks. Japanese Journal of Applied Physics, 51 (4) 41105 doi:10.7567/jjap.51.041105
Ishikawa, Yukari, Sugawara, Yoshihiro, Saitoh, Hiroaki, Danno, Katsunori, Suzuki, Hiroshi, Bessho, Takeshi, Kawai, Yoichiro, Shibata, Noriyoshi (2012) Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate. Japanese Journal of Applied Physics, 51 (4) 41301 doi:10.7567/jjap.51.041301
Wang, Jun, Lu, Wenzhong, Lei, Wen (2012) Effects of Ba Deficiency on Ion Ordering, Grain Growth, and Microwave Dielectric Properties of Ba1-xZn1/3Nb2/3O3Ceramics. Japanese Journal of Applied Physics, 51 (4) 41501 doi:10.7567/jjap.51.041501
Kao, Chyuan-Haur, Chen, Hsiang (2012) Ta2O5Polycrystalline Silicon Capacitors with CF4Plasma Treatment. Japanese Journal of Applied Physics, 51 (4) 41502 doi:10.7567/jjap.51.041502
Cao, Wan Q., Li, Fang L., Ismail, Mukhlis M., Xiong, Gang (2012) Dielectric Properties of Y2O3and Nb2O5Co-Doped Barium Titanate Ceramics. Japanese Journal of Applied Physics, 51 (4) 41503 doi:10.7567/jjap.51.041503
Cho, Sang Hee, Suh, Min Chul (2012) An Enhanced Operational Stability of Organic Light Emitting Devices with Polymeric Buffer Layer. Japanese Journal of Applied Physics, 51 (4) 41601 doi:10.7567/jjap.51.041601
Wu, Wu, Jiandong, Jiandong, Yin, Yin, Yi, Yi, Lan, Lan, Li, Li, Wang, Wang, Qiaohua, Qiaohua, Li, Li, Xuguang, Xuguang, Xiao, Xiao, Dengming, Dengming (2012) Space Charge Trapping and Conduction in Low-Density Polyethylene/Silica Nanocomposite. Japanese Journal of Applied Physics, 51 (4) 41602 doi:10.7567/jjap.51.041602
Yanase, Takashi, Hasegawa, Tetsuya, Nagahama, Taro, Shimada, Toshihiro (2012) Fabrication of Piezoelectric Polyurea Films by Alternating Deposition. Japanese Journal of Applied Physics, 51 (4) 41603 doi:10.7567/jjap.51.041603
Hirata, Shuzo, Heo, Hyo Jung, Shibano, Yuki, Hirata, Osamu, Yahiro, Masayuki, Adachi, Chihaya (2012) Improved Device Lifetime of Organic Light Emitting Diodes with an Electrochemically Stable π-Conjugated Liquid Host in the Liquid Emitting Layer. Japanese Journal of Applied Physics, 51 (4) 41604 doi:10.7567/jjap.51.041604
Chen, Xiangyu, Taguchi, Dai, Weis, Martin, Manaka, Takaaki, Iwamoto, Mitsumasa (2012) Analyzing Photo Induced Internal Electric Field in Pentacene/C60Double-Layer Organic Solar Cells under Various External Voltages by Electric-Field-Induced Optical Second Harmonic Generation Measurement. Japanese Journal of Applied Physics, 51 (4) 41605 doi:10.7567/jjap.51.041605
Nakanishi, Yohei, Okamoto, Kenji (2012) Relationship between Concentration of Initiator and Image-Sticking Phenomenon of Polymer-Sustained-Alignment Liquid Crystal Displays. Japanese Journal of Applied Physics, 51 (4) 41701 doi:10.7567/jjap.51.041701
Takehara, Kosuke, Takeda, Kenichiro, Ito, Shun, Aoshima, Hiroki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi (2012) Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes. Japanese Journal of Applied Physics, 51 (4) 42101 doi:10.7567/jjap.51.042101
Lee, Jieun, Maeda, Yasuna, Atsumi, Yuki, Takino, Yuta, Nishiyama, Nobuhiko, Arai, Sigehisa (2012) Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits. Japanese Journal of Applied Physics, 51 (4) 42201 doi:10.7567/jjap.51.042201
Kameda, Shinji, Mizutani, Akio, Kikuta, Hisao (2012) Effective Medium Theory for Calculating Reflectance from Metal–Dielectric Multilayered Structure. Japanese Journal of Applied Physics, 51 (4) 42202 doi:10.7567/jjap.51.042202
Arakawa, Taro, Hariki, Takehiro, Amma, Yoshimichi, Fukuoka, Masayasu, Ushigome, Motoki, Tada, Kunio (2012) Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well. Japanese Journal of Applied Physics, 51 (4) 42203 doi:10.7567/jjap.51.042203
Xu, Rui, Wang, Xiaodong, Liu, Wen, Song, Liang, Xu, Xiaona, Ji, An, Yang, Fuhua, Li, Jinmin (2012) Optimization of the Dielectric Layer Thickness for Surface-Plasmon-Induced Light Absorption for Silicon Solar Cells. Japanese Journal of Applied Physics, 51 (4) 42301 doi:10.7567/jjap.51.042301
Mizuno, Hidenori, Sai, Hitoshi, Matsubara, Koji, Kondo, Michio (2012) Light Trapping by Ag Nanoparticles Chemically Assembled inside Thin-Film Hydrogenated Microcrystalline Si Solar Cells. Japanese Journal of Applied Physics, 51 (4) 42302 doi:10.7567/jjap.51.042302
Liou, Yeuh-Yeong, Kuo, Li-Hsiang, Yan, Jhong-Yong, Jaing, Cheng-Chung (2012) Implementation of Universal Broadband Visible Antireflection Coating for Various Glass Substrates Using Ion-Assisted Deposition. Japanese Journal of Applied Physics, 51 (4) 42501 doi:10.7567/jjap.51.042501
Hata, Hiroaki, Katayama, Kenji, Shen, Qing, Toyoda, Taro (2012) Characterization of Photoexcited Carriers and Thermal Properties of Nanoparticulate TiO2Film Using Heterodyne Transient Grating Method. Japanese Journal of Applied Physics, 51 (4) 42601 doi:10.7567/jjap.51.042601
Takenaka, Koshi, Shibayama, Takashi, Kasugai, Daiki, Shimizu, Takeshi (2012) Giant Field-Induced Distortion in Mn3SbN at Room Temperature. Japanese Journal of Applied Physics, 51 (4) 43001 doi:10.7567/jjap.51.043001
Dahmani, Faiz (2012) Effect of Seed Layer on Room Temperature Tunnel Magnetoresistance of MgO Barriers Formed by Radical Oxidation in IrMn-Based Magnetic Tunnel Junctions. Japanese Journal of Applied Physics, 51 (4) 43002 doi:10.7567/jjap.51.043002
Lee, ChangYong, Matsuno, Fumiya, Hashimoto, Yoshinori, Okada, Hiroshi, Sawada, Kazuaki, Wakahara, Akihiro (2012) Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor. Japanese Journal of Applied Physics, 51 (4) 44101 doi:10.7567/jjap.51.044101
Iijima, Ryosuke, Edge, Lisa F., Paruchuri, Vamsi, Takayanagi, Mariko (2012) Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal–Oxide–Semiconductor Field-Effect Transistors with High-kGate Dielectrics. Japanese Journal of Applied Physics, 51 (4) 44102 doi:10.7567/jjap.51.044102
Chang, Liann-Be, Ferng, Yi-Cherng, Liao, Jhong-Wei, Lin, Ching-Chi (2012) Improvement of Electrostatic Discharge Protection by Introducing a Spindt-Type Silicon Field Emission Device. Japanese Journal of Applied Physics, 51 (4) 44103 doi:10.7567/jjap.51.044103
Ito, Ryouta, Kawakami, Takayuki, Ito, Yusuke, Sasamori, Takayuki, Isota, Yoji, Honma, Michinori, Nose, Toshiaki (2012) Fundamental Properties of Novel Design Microstrip Line Type of Liquid Crystal Phase Shifter in Microwave Region. Japanese Journal of Applied Physics, 51 (4) 44104 doi:10.7567/jjap.51.044104
Nakata, Mitsuru, Sato, Hiroto, Nakajima, Yoshiki, Tsuji, Hiroshi, Fujisaki, Yoshihide, Takei, Tatsuya, Yamamoto, Toshihiro, Fujikake, Hideo (2012) Analysis of the Influence of Sputtering Damage to Polymer Gate Insulators in Amorphous InGaZnO4Thin-Film Transistors. Japanese Journal of Applied Physics, 51 (4) 44105 doi:10.7567/jjap.51.044105
Shimada, Chieko, Kitamura, Koji, Shiratori, Seimei (2012) Effects of Electrospun TiO2Nanowires Mixed in Nanoparticle-Based Electrode for Dye-Sensitized Solar Cells. Japanese Journal of Applied Physics, 51 (4) 44106 doi:10.7567/jjap.51.044106
Kim, Mi Sook, Seen, Seung Min, Lee, Seung Hee (2012) The Static Electricity Resistant Liquid Crystal Display Driven by Fringe Electric Field. Japanese Journal of Applied Physics, 51 (4) 44201 doi:10.7567/jjap.51.044201
Aoki, Hitoshi, Matsuzawa, Akira (2012) n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design. Japanese Journal of Applied Physics, 51 (4) 44301 doi:10.7567/jjap.51.044301
Cho, Chan-Woo, Lee, Jong-Heun, Riu, Doh-Hyung, Kim, Chang-Yeoul (2012) Fast Responsive Gas Sensor of Vertically Aligned Fluorine-Doped Tin Oxide Nanorod Thin Film. Japanese Journal of Applied Physics, 51 (4) 45001 doi:10.7567/jjap.51.045001
Park, Hyung Goo, Hwang, Sukju, Lim, Juhwan, Kim, Duck-Hwan, Song, In Sang, Kim, Jae Hun, Woo, Deok Ha, Lee, Seok, Jun, Seong Chan (2012) Comparison of Chemical Vapor Sensing Properties between Graphene and Carbon Nanotubes. Japanese Journal of Applied Physics, 51 (4) 45101 doi:10.7567/jjap.51.045101
Nakano, Michihiko, Fujioka, Masahiro, Mai, Kaori, Watanabe, Hideaki, Martin, Yul, Suehiro, Junya (2012) Dielectrophoretic Assembly of Semiconducting Carbon Nanotubes Separated and Enriched by Spin Column Chromatography and Its Application to Gas Sensing. Japanese Journal of Applied Physics, 51 (4) 45102 doi:10.7567/jjap.51.045102
Matsushima, Masahiro, Noda, Mikio, Kalita, Golap, Uchida, Hideo, Wakita, Koichi, Umeno, Masayoshi (2012) Formation of Graphene-Containing Porous Carbon Film for Electric Double-Layer Capacitor by Pulsed Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51 (4) 45103 doi:10.7567/jjap.51.045103
Yamamoto, Takahiro, Sasaoka, Kenji, Watanabe, Satoshi (2012) AC Power Consumption of Single-Walled Carbon Nanotube Interconnects: Non-Equilibrium Green's Function Simulation. Japanese Journal of Applied Physics, 51 (4) 45104 doi:10.7567/jjap.51.045104
Maeyoshi, Yuta, Takano, Katsuyoshi, Asano, Atsushi, Marui, Hiromi, Omichi, Masaaki, Satoh, Takahiro, Kamiya, Tomihiro, Ishii, Yasuyuki, Ohkubo, Takeru, Koka, Masashi, Kada, Wataru, Sugimoto, Masaki, Nishikawa, Hiroyuki, Saeki, Akinori, Seki, Shu (2012) Fabrication of Poly(9,9'-dioctylfluorene)-Based Nano- and Microstructures by Proton Beam Writing. Japanese Journal of Applied Physics, 51 (4) 45201 doi:10.7567/jjap.51.045201
Toyoda, Kenji (2012) Theoretical Investigation of Chemical Spin Doping into Single Porphyrin Junctions toward Ultrahigh-Sensitive Nitric Oxide Sensor. Japanese Journal of Applied Physics, 51 (4) 45202 doi:10.7567/jjap.51.045202
Gwag, Jin Seog, Jo, Soo In, Lee, You-Jin, Kim, Jae-Hoon (2012) Unidirectional Liquid Crystal Pretilt Generation on Asymmetric Nanoscaled Groove Pattern Driven by Atomic Force Microscopic Tip. Japanese Journal of Applied Physics, 51 (4) 45203 doi:10.7567/jjap.51.045203
Lee, KyoungMoo, Abe, Yoshio, Kawamura, Midori, Kim, Kyung Ho (2012) Effects of Substrate Temperature on Electrochromic Properties of Cobalt Oxide and Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using O2and H2O Gases. Japanese Journal of Applied Physics, 51 (4) 45501 doi:10.7567/jjap.51.045501
Kao, Chung-Ho, Tsai, Jia-Hong, Yeh, Sung-Wei, Huang, Hsing-Lu, Gan, Dershin, Shen, Pouyan (2012) Growth of Epitaxial Anatase TiO2(001) Thin Film on NaCl(001) Substrate by Ion Beam Sputtering and Thermal Annealing. Japanese Journal of Applied Physics, 51 (4) 45502 doi:10.7567/jjap.51.045502
Chen, Hsi-Chao, Jan, Der-Jun, Chen, Chien-Han (2012) Investigation of Optical and Electrochromic Properties of Tungsten Oxide Deposited with Horizontal DC and DC Pulse Magnetron Sputtering. Japanese Journal of Applied Physics, 51 (4) 45503 doi:10.7567/jjap.51.045503
Noguchi, Daisuke, Higashimaru, Yukie, Eto, Tomohiro, Kodama, Kazuya, Fukudome, Shoji, Kawano, Yoshihiko, Sei, Fumihiro, Siono, Ichiro (2012) Effect of Nucleation Layer of Photocatalytic TiO2Thin Film Prepared by Two-Step Deposition Using Radical-Assisted Sputtering. Japanese Journal of Applied Physics, 51 (4) 45504 doi:10.7567/jjap.51.045504
Kim, Young-Nam (2012) Characterization of Interfaces between HfO2Thin Film and Metal Electrode with Pre–Post Treatments. Japanese Journal of Applied Physics, 51 (4) 45701 doi:10.7567/jjap.51.045701
Mishima, Ryota, Loan, Ngyuen Thu, Tada, Hirokazu (2012) Electrostatic Properties of Organic Monolayers on Silicon Oxides Studied by Kelvin Probe Force Microscopy. Japanese Journal of Applied Physics, 51 (4) 45702 doi:10.7567/jjap.51.045702
Kikuchi, Jun, Suzuki, Yuta, Muto, Takaaki, Ibuka, Shinji, Ishii, Shozo (2012) Effect of DC Pre-Discharge on the Generation of Atmospheric Pulsed Microdischarges. Japanese Journal of Applied Physics, 51 (4) 46001 doi:10.7567/jjap.51.046001
Koshimizu, Chishio, Ohta, Takayuki, Matsudo, Tatsuo, Tsuchitani, Shigeki, Ito, Masafumi (2012) SimultaneousIn situMeasurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry. Japanese Journal of Applied Physics, 51 (4) 46201 doi:10.7567/jjap.51.046201
Kimura, Takashi, Kasugai, Hiroki (2012) Properties of Inductively Coupled Radio Frequency CH4/H2Plasmas: Experiments and Global Model. Japanese Journal of Applied Physics, 51 (4) 46202 doi:10.7567/jjap.51.046202
Kim, Seonkyu, Lee, Se Byeong, Yoo, Seung Hoon, Cho, Sungkoo, Kim, Dong Wook, Shin, Dongho, Park, Sung Yong, Kim, Chan Hyeong, Lee, Sang Hoon (2012) Quenching Effect, Signal to Noise, Contrast to Noise Ratios on Scintillator Screens for Proton Beam Dosimetry System. Japanese Journal of Applied Physics, 51 (4) 46401 doi:10.7567/jjap.51.046401
Matsuba, Shunya, Honda, Yosuke, Jin, Xiuguang, Miyajima, Tsukasa, Yamamoto, Masahiro, Uchiyama, Takashi, Kuwahara, Makoto, Takeda, Yoshikazu (2012) Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-Based Photocathode. Japanese Journal of Applied Physics, 51 (4) 46402 doi:10.7567/jjap.51.046402
Okamoto, Takeshi, Sano, Yasuhisa, Tachibana, Kazuma, Pho, Bui Van, Arima, Kenta, Inagaki, Kouji, Yagi, Keita, Murata, Junji, Sadakuni, Shun, Asano, Hiroya, Isohashi, Ai, Yamauchi, Kazuto (2012) Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid. Japanese Journal of Applied Physics, 51 (4) 46501 doi:10.7567/jjap.51.046501
Enomoto, Kazuyuki, Arimitsu, Koji, Yoshizawa, Atsutaro, Joshi, Ravi, Yamamoto, Hiroki, Oshima, Akihiro, Kozawa, Takahiro, Tagawa, Seiichi (2012) Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study. Japanese Journal of Applied Physics, 51 (4) 46502 doi:10.7567/jjap.51.046502
Yamamoto, Ryousuke, Yuzawa, Akiko, Shimada, Takuya, Ootera, Yasuaki, Kamata, Yoshiyuki, Kihara, Naoko, Kikitsu, Akira (2012) Nanoimprint Mold for 2.5 Tbit/in.2Directed Self-Assembly Bit Patterned Media with Phase Servo Pattern. Japanese Journal of Applied Physics, 51 (4) 46503 doi:10.7567/jjap.51.046503
Okamoto, Mitsuo, Iijima, Miwako, Fukuda, Kenji, Okumura, Hajime (2012) Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face. Japanese Journal of Applied Physics, 51 (4) 46504 doi:10.7567/jjap.51.046504
Marumoto, Kenji, Aya, Sunao, Yabe, Hedeki, Okada, Tatsunori, Sumitani, Hiroaki (2012) Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks. Japanese Journal of Applied Physics, 51 (4) 46505 doi:10.7567/jjap.51.046505
Kishii, Sadahiro, Nakamura, Ko, Hanawa, Kenzo, Watanabe, Satoru, Arimoto, Yoshihiro, Kurokawa, Syuhei, Doi, Toshiro K. (2012) Mn2O3Slurry Achieving Reduction of Slurry Waste. Japanese Journal of Applied Physics, 51 (4) 46506 doi:10.7567/jjap.51.046506
Saari, Mohd Mawardi, Sakai, Kenji, Kiwa, Toshihiko, Tsukamoto, Akira, Adachi, Seiji, Tanabe, Keiichi, Kandori, Akihiko, Tsukada, Keiji (2012) Development of a Compact Moving-Sample Magnetometer Using High-TcSuperconducting Quantum Interference Device. Japanese Journal of Applied Physics, 51 (4) 46601 doi:10.7567/jjap.51.046601
Miyamoto, Takeshi, Wada, Takahiro, Niimi, Hironobu, Suzuki, Shushi, Kato, Makoto, Kudo, Masato, Asakura, Kiyotaka (2012) A New Collinear-Type Energy-Filtered X-ray Photoemission Electron Microscope Equipped with a Multi-Pole Aberration-Corrected Air-Core Coil Wien Filter. Japanese Journal of Applied Physics, 51 (4) 46701 doi:10.7567/jjap.51.046701
Ishida, Shutaro, Nishizawa, Norihiko, Kitatsuji, Masashi, Ohshima, Hiroyoshi, Hasegawa, Yoshinori, Matsushima, Miyoko, Kawabe, Tsutomu (2012) Observation of Fine Lung Structure by Ultrahigh-Resolution Optical Coherence Tomography Using 800, 1060, and 1300 nm Supercontinua. Japanese Journal of Applied Physics, 51 (4) 47001 doi:10.7567/jjap.51.047001
Huang, Kuan-Rong, Chang, Jeng-Shian, Chao, Sheng D., Wung, Tzong-Shyan, Wu, Kuang-Chong (2012) Study of Active Micromixer Driven by Electrothermal Force. Japanese Journal of Applied Physics, 51 (4) 47002 doi:10.7567/jjap.51.047002
Lee, Chia-Yen, Leong, Jik-Chang, Wang, Yao-Nan, Fu, Lung-Ming, Chen, (2012) A Ferrofluidic Magnetic Micropump for Variable-Flow-Rate Applications. Japanese Journal of Applied Physics, 51 (4) 47201 doi:10.7567/jjap.51.047201
Kusano, Hiroki, Matias-Lopes, José A., Miyajima, Mitsuhiro, Shibamura, Eido, Hasebe, Nobuyuki (2012) Density Dependence of the Longitudinal Diffusion Coefficient of Electrons in Xenon. Japanese Journal of Applied Physics, 51 (4) 48001 doi:10.7567/jjap.51.048001
Akiyama, Toru, Saito, Yasutaka, Nakamura, Kohji, Ito, Tomonori (2012) Reconstructions on AlN Nonpolar Surfaces in the Presence of Hydrogen. Japanese Journal of Applied Physics, 51 (4) 48002 doi:10.7567/jjap.51.048002
Ogura, Koichi, Shizuma, Toshiyuki, Hayakawa, Takehito, Yogo, Akifumi, Nishiuchi, Mamiko, Orimo, Satoshi, Sagisaka, Akito, Pirozhkov, Alexander, Mori, Michiaki, Kiriyama, Hiromitsu, Kanazawa, Shuhei, Kondo, Shuji, Nakai, Yoshiki, Shimomura, Takuya, Tanoue, Manabu, Sasao, Hajime, Wakai, Daisuke, Sasao, Fumitaka, Okada, Hajime, Kimura, Toyoaki, Oishi, Yuji, Nayuki, Takuya, Fujii, Takashi, Nemoto, Koshichi, Daido, Hiroyuki (2012) Complementary Characterization of Radioactivity Produced by Repetitive Laser-Driven Proton Beam Using Shot-to-Shot Proton Spectral Measurement and Direct Activation Measurement. Japanese Journal of Applied Physics, 51 (4) 48003 doi:10.7567/jjap.51.048003
Naritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Maruyama, Takahiro (2012) X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source. Japanese Journal of Applied Physics, 51 (4) 48004 doi:10.7567/jjap.51.048004
Yamamoto, Takashi, Ogawa, Shingo, Tsuji, Jun-ichi, Kita, Koji, Tagami, Katsunori, Uda, Tsuyoshi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2012) Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics. Japanese Journal of Applied Physics, 51 (4) 48005 doi:10.7567/jjap.51.048005

See Also

These are possibly similar items as determined by title/reference text matching only.

(1965, April) Japanese Journal of Applied Physics Vol. 4 (4) Japan Society of Applied Physics
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(2005, April) Japanese Journal of Applied Physics Vol. 44 (4) Japan Society of Applied Physics
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(2007, April) Japanese Journal of Applied Physics Vol. 46 (4) Japan Society of Applied Physics
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(2009, April) Japanese Journal of Applied Physics Vol. 48 (4) Japan Society of Applied Physics
(2010, April) Japanese Journal of Applied Physics Vol. 49 (4) Japan Society of Applied Physics
(1962, April) Japanese Journal of Applied Physics Vol. 1 (4) Japan Society of Applied Physics
(1963, April) Japanese Journal of Applied Physics Vol. 2 (4) Japan Society of Applied Physics
 
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