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Lee, ChangYong, Matsuno, Fumiya, Hashimoto, Yoshinori, Okada, Hiroshi, Sawada, Kazuaki, Wakahara, Akihiro (2012) Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor. Japanese Journal of Applied Physics, 51 (4) 44101 doi:10.7567/jjap.51.044101

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Reference TypeJournal (article/letter/editorial)
TitleIntelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor
JournalJapanese Journal of Applied Physics
AuthorsLee, ChangYongAuthor
Matsuno, FumiyaAuthor
Hashimoto, YoshinoriAuthor
Okada, HiroshiAuthor
Sawada, KazuakiAuthor
Wakahara, AkihiroAuthor
Year2012 (April 1)Volume51
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.044101Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15042480Long-form Identifiermindat:1:5:15042480:4
GUID0
Full ReferenceLee, ChangYong, Matsuno, Fumiya, Hashimoto, Yoshinori, Okada, Hiroshi, Sawada, Kazuaki, Wakahara, Akihiro (2012) Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor. Japanese Journal of Applied Physics, 51 (4) 44101 doi:10.7567/jjap.51.044101
Plain TextLee, ChangYong, Matsuno, Fumiya, Hashimoto, Yoshinori, Okada, Hiroshi, Sawada, Kazuaki, Wakahara, Akihiro (2012) Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor. Japanese Journal of Applied Physics, 51 (4) 44101 doi:10.7567/jjap.51.044101
In(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics

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