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Sakai, Heisuke, Isoda, Hayato, Furukawa, Yukio (2012) Organic Field-Effect-Transistor-Based Memory with Nylon 11 as Gate Dielectric. Japanese Journal of Applied Physics, 51 (4) 40210 doi:10.7567/jjap.51.040210

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Reference TypeJournal (article/letter/editorial)
TitleOrganic Field-Effect-Transistor-Based Memory with Nylon 11 as Gate Dielectric
JournalJapanese Journal of Applied Physics
AuthorsSakai, HeisukeAuthor
Isoda, HayatoAuthor
Furukawa, YukioAuthor
Year2012 (April 1)Volume51
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.040210Search in ResearchGate
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Mindat Ref. ID15042451Long-form Identifiermindat:1:5:15042451:4
GUID0
Full ReferenceSakai, Heisuke, Isoda, Hayato, Furukawa, Yukio (2012) Organic Field-Effect-Transistor-Based Memory with Nylon 11 as Gate Dielectric. Japanese Journal of Applied Physics, 51 (4) 40210 doi:10.7567/jjap.51.040210
Plain TextSakai, Heisuke, Isoda, Hayato, Furukawa, Yukio (2012) Organic Field-Effect-Transistor-Based Memory with Nylon 11 as Gate Dielectric. Japanese Journal of Applied Physics, 51 (4) 40210 doi:10.7567/jjap.51.040210
In(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics

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Sakai, Heisuke, Isoda, Hayato, Furukawa, Yukio (2012) Organic Field-Effect-Transistor-Based Memory with Nylon 11 as Gate Dielectric. Japanese Journal of Applied Physics, 51. 40210 doi:10.1143/jjap.51.040210
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