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Koshimizu, Chishio, Ohta, Takayuki, Matsudo, Tatsuo, Tsuchitani, Shigeki, Ito, Masafumi (2012) SimultaneousIn situMeasurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry. Japanese Journal of Applied Physics, 51 (4) 46201 doi:10.7567/jjap.51.046201

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Reference TypeJournal (article/letter/editorial)
TitleSimultaneousIn situMeasurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry
JournalJapanese Journal of Applied Physics
AuthorsKoshimizu, ChishioAuthor
Ohta, TakayukiAuthor
Matsudo, TatsuoAuthor
Tsuchitani, ShigekiAuthor
Ito, MasafumiAuthor
Year2012 (April 1)Volume51
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.046201Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15042503Long-form Identifiermindat:1:5:15042503:0
GUID0
Full ReferenceKoshimizu, Chishio, Ohta, Takayuki, Matsudo, Tatsuo, Tsuchitani, Shigeki, Ito, Masafumi (2012) SimultaneousIn situMeasurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry. Japanese Journal of Applied Physics, 51 (4) 46201 doi:10.7567/jjap.51.046201
Plain TextKoshimizu, Chishio, Ohta, Takayuki, Matsudo, Tatsuo, Tsuchitani, Shigeki, Ito, Masafumi (2012) SimultaneousIn situMeasurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry. Japanese Journal of Applied Physics, 51 (4) 46201 doi:10.7567/jjap.51.046201
In(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics

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Koshimizu, Chishio, Ohta, Takayuki, Matsudo, Tatsuo, Tsuchitani, Shigeki, Ito, Masafumi (2012) SimultaneousIn situMeasurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry. Japanese Journal of Applied Physics, 51. 46201 doi:10.1143/jjap.51.046201
Ohta, Takayuki, Koshimizu, Chishio, Kawasaki, Kanta, Takeda, Keigo, Ito, Masafumi (2009) Simultaneous measurement of substrate temperature and thin-film thickness on SiO2/Si wafer using optical-fiber-type low-coherence interferometry. Journal of Applied Physics, 105 (1). 13110pp. doi:10.1063/1.3058592
Takeda, Keigo, Tomekawa, Yutaka, Iwasaki, Masahiro, Ito, Masafumi, Ohta, Takayuki, Yamakawa, Koji, Hori, Masaru (2004) A Novel Silicon-Dioxide Etching Process Employing Pulse-Modulated Electron-Beam-Excited Plasma. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l1166
Tsutsumi, Takayoshi, Ohta, Takayuki, Ishikawa, Kenji, Takeda, Keigo, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru, Ito, Masafumi (2015) Robust characteristics of semiconductor-substrate temperature measurement by autocorrelation-type frequency-domain low-coherence interferometry. Japanese Journal of Applied Physics, 54 (1) 1 doi:10.7567/jjap.54.01ab03
Tsutsumi, Takayoshi, Ohta, Takayuki, Takeda, Keigo, Ito, Masafumi, Hori, Masaru (2015) Wavelength dependence for silicon-wafer temperature measurement by autocorrelation-type frequency-domain low-coherence interferometry. Applied Optics, 54. 7088pp. doi:10.1364/ao.54.007088
Iwase, Taku, Yokogawa, Kenetsu, Mori, Masahito (2018) Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide. Japanese Journal of Applied Physics, 57 (6) 6 doi:10.7567/jjap.57.06jc03
Idris, Irman, Sugiura, Osamu (1998) Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen. Japanese Journal of Applied Physics, 37. 6562-6568 doi:10.1143/jjap.37.6562
Inoue, Mari, Ohta, Takayuki, Takota, Naoki, Tsuchitani, Shigeki, Ito, Masafumi, Takashima, Seigo, Kano, Hiroyuki, Yamakawa, Koji, Takeda, Keigo, Hori, Masaru (2012) Line-Profiles and Translational Temperatures of Pb Atoms in Multi-Micro Hollow Cathode Lamp Measured by Diode Laser Absorption Spectroscopy. Japanese Journal of Applied Physics, 51 (8) 86301 doi:10.7567/jjap.51.086301
Takeda, Keigo, Tomekawa, Yutaka, Shiina, Tatsuo, Ito, Masafumi, Okamura, Yasuyuki, Ishii, Nobuo (2004) Temperature-Measurement System Using Optical Fiber-Type Low-Coherence Interferometry for MultiLayered Substrate. Japanese Journal of Applied Physics, 43 (11) 7737-7741 doi:10.1143/jjap.43.7737
Inoue, Mari, Ohta, Takayuki, Takota, Naoki, Tsuchitani, Shigeki, Takashima, Seigo, Yamakawa, Koji, Kano, Hiroyuki, Takeda, Keigo, Hori, Masaru, Ito, Masafumi (2012) Properties of Indium–Zinc-Oxide Films Synthesized by Radio Frequency Magnetron Sputtering Based on Gas Phase Monitoring Using Multi-Micro Hollow Cathode Lamp. Japanese Journal of Applied Physics, 51 (11) 116202 doi:10.7567/jjap.51.116202
Kobayashi, Keizo, Ohta, Kuniichi (1972) Electronic Processes in Metal-Silicon Nitride-Silicon Dioxide-Silicon Systems. Japanese Journal of Applied Physics, 11 (4) 538-545 doi:10.1143/jjap.11.538
 
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