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Du, Weijie, Saito, Takanobu, Khan, Muhammad Ajmal, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2012) Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2Overlayers. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp01

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2Overlayers
JournalJapanese Journal of Applied Physics
AuthorsDu, WeijieAuthor
Saito, TakanobuAuthor
Khan, Muhammad AjmalAuthor
Toko, KaoruAuthor
Usami, NoritakaAuthor
Suemasu, TakashiAuthor
Year2012 (April 1)Volume51
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.04dp01Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15042622Long-form Identifiermindat:1:5:15042622:8
GUID0
Full ReferenceDu, Weijie, Saito, Takanobu, Khan, Muhammad Ajmal, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2012) Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2Overlayers. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp01
Plain TextDu, Weijie, Saito, Takanobu, Khan, Muhammad Ajmal, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2012) Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2Overlayers. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dp01
In(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics

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Du, Weijie, Saito, Takanobu, Khan, Muhammad Ajmal, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2012) Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n$^{+}$-BaSi$_{2}$/p$^{+}$-Si Tunnel Junction to Undoped BaSi$_{2}$ Overlayers. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dp01
Baba, Masakazu, Nakamura, Kotaro, Du, Weijie, Khan, M. Ajmal, Koike, Shintaro, Toko, Kaoru, Usami, Noritaka, Saito, Noriyuki, Yoshizawa, Noriko, Suemasu, Takashi (2012) Molecular Beam Epitaxy of BaSi2Films with Grain Size over 4 µm on Si(111) Japanese Journal of Applied Physics, 51 (9) 98003 doi:10.7567/jjap.51.098003
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Koike, Shintaro, Baba, Masakazu, Takabe, Ryota, Zhang, Ning, Du, Weijie, Toko, Kaoru, Suemasu, Takashi (2014) Photoresponse properties of undoped BaSi2epitaxial layers on n+-BaSi2/p+-Si(001) by molecular beam epitaxy. Japanese Journal of Applied Physics, 53 (5) 58007 doi:10.7567/jjap.53.058007
Du, Weijie, Suzuno, Mitsushi, Ajmal Khan, M., Toh, Katsuaki, Baba, Masakazu, Nakamura, Kotaro, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2012) Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells. Applied Physics Letters, 100 (15). 152114pp. doi:10.1063/1.3703585
Ajmal Khan, M., Hara, Kosuke O., Nakamura, Kotaro, Du, Weijie, Baba, Masakazu, Toh, Katsuaki, Suzuno, Mitsushi, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2013) Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells. Journal of Crystal Growth, 378. 201-204 doi:10.1016/j.jcrysgro.2012.12.153
Du, Weijie, Baba, Masakazu, Toko, Kaoru, Hara, Kosuke O., Watanabe, Kentaro, Sekiguchi, Takashi, Usami, Noritaka, Suemasu, Takashi (2014) Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications. Journal of Applied Physics, 115 (22). 223701pp. doi:10.1063/1.4882117
Toh, Katsuaki, Hara, Kosuke O., Usami, Noritaka, Saito, Noriyuki, Yoshizawa, Noriko, Toko, Kaoru, Suemasu, Takashi (2012) Epitaxy of Orthorhombic BaSi2with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature. Japanese Journal of Applied Physics, 51 (9) 95501 doi:10.7567/jjap.51.095501
Kodama, Komomo, Takabe, Ryota, Yachi, Suguru, Toko, Kaoru, Suemasu, Takashi (2018) Decrease in electrical contact resistance of Sb-doped n+-BaSi2layers and spectral response of an Sb-doped n+-BaSi2/undoped BaSi2structure for solar cells. Japanese Journal of Applied Physics, 57 (3) 31202 doi:10.7567/jjap.57.031202
Takabe, Ryota, Hara, Kosuke O., Baba, Masakazu, Du, Weijie, Shimada, Naoya, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi (2014) Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111). Journal of Applied Physics, 115 (19). 193510pp. doi:10.1063/1.4878159
Hara, Kosuke O., Usami, Noritaka, Toh, Katsuaki, Toko, Kaoru, Suemasu, Takashi (2012) Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate. Japanese Journal of Applied Physics, 51 (10) 10 doi:10.7567/jjap.51.10nb06
 
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