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Suzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm02

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Reference TypeJournal (article/letter/editorial)
TitleDesign of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure
JournalJapanese Journal of Applied Physics
AuthorsSuzuki, DaisukeAuthor
Natsui, MasanoriAuthor
Endoh, TetsuoAuthor
Ohno, HideoAuthor
Hanyu, TakahiroAuthor
Year2012 (April 1)Volume51
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.04dm02Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15042613Long-form Identifiermindat:1:5:15042613:6
GUID0
Full ReferenceSuzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm02
Plain TextSuzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm02
In(2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics

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Suzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dm02
Matsunaga, Shoun, Katsumata, Akira, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bm06
Matsunaga, Shoun, Natsui, Masanori, Hiyama, Kimiyuki, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2010) Fine-Grained Power-Gating Scheme of a Metal–Oxide–Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dm05
Matsunaga, Shoun, Katsumata, Akira, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bm06
Natsui, Masanori, Tamakoshi, Akira, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2017) Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction. Japanese Journal of Applied Physics, 56 (4) 4 doi:10.7567/jjap.56.04cn01
Matsunaga, Shoun, Natsui, Masanori, Ikeda, Shoji, Miura, Katsuya, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2011) Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme. Japanese Journal of Applied Physics, 50 (6) 63004 doi:10.7567/jjap.50.063004
Ohsawa, Takashi, Iga, Fumitaka, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo (2012) High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bd01
Matsunaga, Shoun, Katsumata, Akira, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory. Journal of Applied Physics, 111 (7). doi:10.1063/1.3677875
Matsunaga, Shoun, Natsui, Masanori, Ikeda, Shoji, Miura, Katsuya, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2011) Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme. Japanese Journal of Applied Physics, 50 (6) 63004 doi:10.1143/jjap.50.063004
Suzuki, Daisuke, Hanyu, Takahiro (2017) Design of a low-power nonvolatile flip-flop using three-terminal magnetic-tunnel-junction-based self-terminated mechanism. Japanese Journal of Applied Physics, 56 (4) 4 doi:10.7567/jjap.56.04cn06
Ohsawa, Takashi, Iga, Fumitaka, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo (2012) High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bd01
 
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