Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd16
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Oh, Jeong-Hoon | Author | |
| Ryoo, Kyung-Chang | Author | ||
| Jung, Sunghun | Author | ||
| Park, Yongjik | Author | ||
| Park, Byung-Gook | Author | ||
| Year | 2012 (April 1) | Volume | 51 |
| Issue | 4 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.7567/jjap.51.04dd16Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15042561 | Long-form Identifier | mindat:1:5:15042561:0 |
| GUID | 0 | ||
| Full Reference | Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd16 | ||
| Plain Text | Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd16 | ||
| In | (2012, April) Japanese Journal of Applied Physics Vol. 51 (4) Japan Society of Applied Physics | ||
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