Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO$_{2}$-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dd16
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO$_{2}$-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Oh, Jeong-Hoon | Author | |
| Ryoo, Kyung-Chang | Author | ||
| Jung, Sunghun | Author | ||
| Park, Yongjik | Author | ||
| Park, Byung-Gook | Author | ||
| Year | 2012 (April 20) | Volume | 51 |
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.51.04dd16Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15040170 | Long-form Identifier | mindat:1:5:15040170:6 |
| GUID | 0 | ||
| Full Reference | Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO$_{2}$-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dd16 | ||
| Plain Text | Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO$_{2}$-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dd16 | ||
| In | (2012) Japanese Journal of Applied Physics Vol. 51. Japan Society of Applied Physics | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
