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Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2011) Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd15

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Reference TypeJournal (article/letter/editorial)
TitleNovel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics
JournalJapanese Journal of Applied Physics
AuthorsRyoo, Kyung-ChangAuthor
Oh, Jeong-HoonAuthor
Jung, SunghunAuthor
Jeong, HongsikAuthor
Park, Byung-GookAuthor
Year2011 (April 20)Volume50
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.04dd15Search in ResearchGate
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Mindat Ref. ID15037710Long-form Identifiermindat:1:5:15037710:0
GUID0
Full ReferenceRyoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2011) Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd15
Plain TextRyoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2011) Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd15
In(2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics

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Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2011) Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dd15
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dd14
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd14
Ryoo, Kyung-Chang, Kim, Sungjun, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability. Japanese Journal of Applied Physics, 51. 6 doi:10.1143/jjap.51.06fe06
Ryoo, Kyung-Chang, Kim, Sungjun, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability. Japanese Journal of Applied Physics, 51 (6) 6 doi:10.7567/jjap.51.06fe06
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dd07
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2012) Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd07
Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO$_{2}$-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dd16
Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook (2012) Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd16
Kim, Sungjun, Jung, Sunghun, Kim, Min-Hwi, Cho, Seongjae, Park, Byung-Gook (2015) Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications. Applied Physics Letters, 106 (21). 212106pp. doi:10.1063/1.4921926
Song, Jae Young, Kim, Jong Pil, Kim, Sang Wan, Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Sun, Min-Chul, Kim, Garam, Yun, Jang-Gn, Shin, Hyungcheol, Park, Byung-Gook (2010) Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell. Japanese Journal of Applied Physics, 49 (10) 104202 doi:10.1143/jjap.49.104202
 
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