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Kuboi, Nobuyuki, Tatsumi, Tetsuya, Kobayashi, Shoji, Komachi, Jun, Fukasawa, Masanaga, Kinoshita, Takashi, Ansai, Hisahiro (2011) Numerical Simulation Method for Plasma-Induced Damage Profile in SiO2Etching. Japanese Journal of Applied Physics, 50 (11) 116501 doi:10.7567/jjap.50.116501

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Reference TypeJournal (article/letter/editorial)
TitleNumerical Simulation Method for Plasma-Induced Damage Profile in SiO2Etching
JournalJapanese Journal of Applied Physics
AuthorsKuboi, NobuyukiAuthor
Tatsumi, TetsuyaAuthor
Kobayashi, ShojiAuthor
Komachi, JunAuthor
Fukasawa, MasanagaAuthor
Kinoshita, TakashiAuthor
Ansai, HisahiroAuthor
Year2011 (November 1)Volume50
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.116501Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15037209Long-form Identifiermindat:1:5:15037209:9
GUID0
Full ReferenceKuboi, Nobuyuki, Tatsumi, Tetsuya, Kobayashi, Shoji, Komachi, Jun, Fukasawa, Masanaga, Kinoshita, Takashi, Ansai, Hisahiro (2011) Numerical Simulation Method for Plasma-Induced Damage Profile in SiO2Etching. Japanese Journal of Applied Physics, 50 (11) 116501 doi:10.7567/jjap.50.116501
Plain TextKuboi, Nobuyuki, Tatsumi, Tetsuya, Kobayashi, Shoji, Komachi, Jun, Fukasawa, Masanaga, Kinoshita, Takashi, Ansai, Hisahiro (2011) Numerical Simulation Method for Plasma-Induced Damage Profile in SiO2Etching. Japanese Journal of Applied Physics, 50 (11) 116501 doi:10.7567/jjap.50.116501
In(2011, November) Japanese Journal of Applied Physics Vol. 50 (11) Japan Society of Applied Physics

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Kuboi, Nobuyuki, Tatsumi, Tetsuya, Kobayashi, Shoji, Komachi, Jun, Fukasawa, Masanaga, Kinoshita, Takashi, Ansai, Hisahiro (2011) Numerical Simulation Method for Plasma-Induced Damage Profile in SiO$_{2}$ Etching. Japanese Journal of Applied Physics, 50. 116501 doi:10.1143/jjap.50.116501
Kuboi, Nobuyuki, Fukasawa, Masanaga, Tatsumi, Tetsuya (2016) Advanced simulation technology for etching process design for CMOS device applications. Japanese Journal of Applied Physics, 55 (7) 7 doi:10.7567/jjap.55.07la02
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Ito, Tomoko, Karahashi, Kazuhiro, Fukasawa, Masanaga, Tatsumi, Tetsuya, Hamaguchi, Satoshi (2011) Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion. Japanese Journal of Applied Physics, 50 (8) 8 doi:10.7567/jjap.50.08kd02
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Ito, Tomoko, Karahashi, Kazuhiro, Fukasawa, Masanaga, Tatsumi, Tetsuya, Hamaguchi, Satoshi (2011) Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion. Japanese Journal of Applied Physics, 50 (8) 8 doi:10.1143/jjap.50.08kd02
Kuboi, Nobuyuki, Matsugai, Hiroyasu, Tatsumi, Tetsuya, Kobayashi, Shoji, Hagimoto, Yoshiya, Iwamoto, Hayato (2023) Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method. Japanese Journal of Applied Physics, 62. doi:10.35848/1347-4065/acbebb
Li, Hu, Karahashi, Kazuhiro, Fukasawa, Masanaga, Nagahata, Kazunori, Tatsumi, Tetsuya, Hamaguchi, Satoshi (2016) Mass-selected ion beam study on etching characteristics of ZnO by methane-based plasma. Japanese Journal of Applied Physics, 55 (2) 21202 doi:10.7567/jjap.55.021202
 
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