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Mizuno, Masao (2011) Photoluminescence of ZnS–SiO2:Ce Thin Films Deposited by Magnetron Sputtering. Japanese Journal of Applied Physics, 50 (12) 128002 doi:10.7567/jjap.50.128002

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence of ZnS–SiO2:Ce Thin Films Deposited by Magnetron Sputtering
JournalJapanese Journal of Applied Physics
AuthorsMizuno, MasaoAuthor
Year2011 (December 1)Volume50
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.128002Search in ResearchGate
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Mindat Ref. ID15037311Long-form Identifiermindat:1:5:15037311:9
GUID0
Full ReferenceMizuno, Masao (2011) Photoluminescence of ZnS–SiO2:Ce Thin Films Deposited by Magnetron Sputtering. Japanese Journal of Applied Physics, 50 (12) 128002 doi:10.7567/jjap.50.128002
Plain TextMizuno, Masao (2011) Photoluminescence of ZnS–SiO2:Ce Thin Films Deposited by Magnetron Sputtering. Japanese Journal of Applied Physics, 50 (12) 128002 doi:10.7567/jjap.50.128002
In(2011, December) Japanese Journal of Applied Physics Vol. 50 (12) Japan Society of Applied Physics

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Mizuno, Masao (2011) Photoluminescence of ZnS–SiO$_{2}$:Ce Thin Films Deposited by Magnetron Sputtering. Japanese Journal of Applied Physics, 50. 128002 doi:10.1143/jjap.50.128002
Mizuno, Masao, Miyamoto, Takashi (2000) Properties of Germanium-Doped Indium Oxide Thin Films Prepared by DC Magnetron Sputtering. Japanese Journal of Applied Physics, 39. 1849-1854 doi:10.1143/jjap.39.1849
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Tsai, Wen Chou, Tseng, Tseung Yuen (1997) A-Axis YBCO Thin Films Deposited by DC Magnetron Sputtering. Japanese Journal of Applied Physics, 36. 76-83 doi:10.1143/jjap.36.76
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Yagi, Takashi, Oka, Nobuto, Okabe, Takashi, Taketoshi, Naoyuki, Baba, Tetsuya, Shigesato, Yuzo (2011) Effect of Oxygen Impurities on Thermal Diffusivity of AlN Thin Films Deposited by Reactive RF Magnetron Sputtering. Japanese Journal of Applied Physics, 50 (11) 11 doi:10.1143/jjap.50.11rb01
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