Kim, Sun-Jae, Lee, Soo-Yeon, Lee, Young-Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Kwon, Jang-Yeon, Han, Min-Koo (2011) Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 50 (2) 24104 doi:10.1143/jjap.50.024104
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Kim, Sun-Jae | Author | |
| Lee, Soo-Yeon | Author | ||
| Lee, Young-Wook | Author | ||
| Lee, Woo-Geun | Author | ||
| Yoon, Kap-Soo | Author | ||
| Kwon, Jang-Yeon | Author | ||
| Han, Min-Koo | Author | ||
| Year | 2011 (February 21) | Volume | 50 |
| Issue | 2 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.50.024104Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15037356 | Long-form Identifier | mindat:1:5:15037356:0 |
| GUID | 0 | ||
| Full Reference | Kim, Sun-Jae, Lee, Soo-Yeon, Lee, Young-Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Kwon, Jang-Yeon, Han, Min-Koo (2011) Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 50 (2) 24104 doi:10.1143/jjap.50.024104 | ||
| Plain Text | Kim, Sun-Jae, Lee, Soo-Yeon, Lee, Young-Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Kwon, Jang-Yeon, Han, Min-Koo (2011) Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 50 (2) 24104 doi:10.1143/jjap.50.024104 | ||
| In | (2011, February) Japanese Journal of Applied Physics Vol. 50 (2) Japan Society of Applied Physics | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
