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Han, Genquan, Guo, Pengfei, Yang, Yue, Fan, Lu, Yee, Ye Sheng, Zhan, Chunlei, Yeo, Yee-Chia (2011) Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dj07

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Reference TypeJournal (article/letter/editorial)
TitleSource Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure
JournalJapanese Journal of Applied Physics
AuthorsHan, GenquanAuthor
Guo, PengfeiAuthor
Yang, YueAuthor
Fan, LuAuthor
Yee, Ye ShengAuthor
Zhan, ChunleiAuthor
Yeo, Yee-ChiaAuthor
Year2011 (April 20)Volume50
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.04dj07Search in ResearchGate
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Mindat Ref. ID15037777Long-form Identifiermindat:1:5:15037777:3
GUID0
Full ReferenceHan, Genquan, Guo, Pengfei, Yang, Yue, Fan, Lu, Yee, Ye Sheng, Zhan, Chunlei, Yeo, Yee-Chia (2011) Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dj07
Plain TextHan, Genquan, Guo, Pengfei, Yang, Yue, Fan, Lu, Yee, Ye Sheng, Zhan, Chunlei, Yeo, Yee-Chia (2011) Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dj07
In(2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics

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Han, Genquan, Guo, Pengfei, Yang, Yue, Fan, Lu, Yee, Ye Sheng, Zhan, Chunlei, Yeo, Yee-Chia (2011) Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dj07
Han, Genquan, Guo, Pengfei, Yang, Yue, Zhan, Chunlei, Zhou, Qian, Yeo, Yee-Chia (2011) Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate. Applied Physics Letters, 98 (15). 153502pp. doi:10.1063/1.3579242
Low, Kain Lu, Zhan, Chunlei, Han, Genquan, Yang, Yue, Goh, Kian-Hui, Guo, Pengfei, Toh, Eng-Huat, Yeo, Yee-Chia (2012) Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bc04
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Yang, Yue, Guo, Pengfei, Han, Genquan, Lu Low, Kain, Zhan, Chunlei, Yeo, Yee-Chia (2012) Simulation of tunneling field-effect transistors with extended source structures. Journal of Applied Physics, 111 (11). 114514pp. doi:10.1063/1.4729068
Yang, Yue, Lu Low, Kain, Wang, Wei, Guo, Pengfei, Wang, Lanxiang, Han, Genquan, Yeo, Yee-Chia (2013) Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study. Journal of Applied Physics, 113 (19). 194507pp. doi:10.1063/1.4805051
Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Sylvester, Dennis, Heng, Chun-Huat, Samudra, Ganesh S., Yeo, Yee-Chia (2008) Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source. Japanese Journal of Applied Physics, 47 (4) 2593-2597 doi:10.1143/jjap.47.2593
Guo, Pengfei, Yang, Yue, Cheng, Yuanbing, Han, Genquan, Pan, Jisheng, Ivana, , Zhang, Zheng, Hu, Hailong, Xiang Shen, Ze, Kean Chia, Ching, Yeo, Yee-Chia (2013) Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction. Journal of Applied Physics, 113 (9). 94502pp. doi:10.1063/1.4794010
Wang, Grace Huiqi, Toh, Eng-Huat, Tung, Chih-Hang, Du, Anyan, Lo, Guo-Qiang, Samudra, Ganesh, Yeo, Yee-Chia (2007) Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement. Japanese Journal of Applied Physics, 46 (4) 2062-2066 doi:10.1143/jjap.46.2062
Wang, Grace Huiqi, Toh, Eng-Huat, Tung, Chih-Hang, Tripathy, Sudhinranjan, Samudra, Ganesh S., Yeo, Yee-Chia (2008) Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement. Japanese Journal of Applied Physics, 47 (4) 2551-2555 doi:10.1143/jjap.47.2551
Yeo, Yee-Chia, Sun, Jisong (2005) Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions. Applied Physics Letters, 86 (2). 23103pp. doi:10.1063/1.1846152
 
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