Yeo, Yee-Chia, Sun, Jisong (2005) Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions. Applied Physics Letters, 86 (2). 23103pp. doi:10.1063/1.1846152
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions | ||
| Journal | Applied Physics Letters | ||
| Authors | Yeo, Yee-Chia | Author | |
| Sun, Jisong | Author | ||
| Year | 2005 (January 10) | Volume | 86 |
| Issue | 2 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.1846152Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8542790 | Long-form Identifier | mindat:1:5:8542790:7 |
| GUID | 0 | ||
| Full Reference | Yeo, Yee-Chia, Sun, Jisong (2005) Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions. Applied Physics Letters, 86 (2). 23103pp. doi:10.1063/1.1846152 | ||
| Plain Text | Yeo, Yee-Chia, Sun, Jisong (2005) Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions. Applied Physics Letters, 86 (2). 23103pp. doi:10.1063/1.1846152 | ||
| In | (2005, January) Applied Physics Letters Vol. 86 (2) AIP Publishing | ||
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