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Koh, Shao-Ming, Samudra, Ganesh S., Yeo, Yee-Chia (2010) Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors. Applied Physics Letters, 97 (3). 32111pp. doi:10.1063/1.3465661

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Reference TypeJournal (article/letter/editorial)
TitleCarrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
JournalApplied Physics Letters
AuthorsKoh, Shao-MingAuthor
Samudra, Ganesh S.Author
Yeo, Yee-ChiaAuthor
Year2010 (July 19)Volume97
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3465661Search in ResearchGate
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Mindat Ref. ID8589625Long-form Identifiermindat:1:5:8589625:9
GUID0
Full ReferenceKoh, Shao-Ming, Samudra, Ganesh S., Yeo, Yee-Chia (2010) Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors. Applied Physics Letters, 97 (3). 32111pp. doi:10.1063/1.3465661
Plain TextKoh, Shao-Ming, Samudra, Ganesh S., Yeo, Yee-Chia (2010) Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors. Applied Physics Letters, 97 (3). 32111pp. doi:10.1063/1.3465661
In(2010, July) Applied Physics Letters Vol. 97 (3) AIP Publishing

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