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Gong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Zhu, Ivana, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia (2011) Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain withIn situDoping for Series Resistance Reduction. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04df01

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Reference TypeJournal (article/letter/editorial)
TitleSource/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain withIn situDoping for Series Resistance Reduction
JournalJapanese Journal of Applied Physics
AuthorsGong, XiaoAuthor
Chin, Hock-ChunAuthor
Koh, Shao-MingAuthor
Wang, LanxiangAuthor
Zhu, IvanaAuthor
Wang, BenzhongAuthor
Chia, Ching KeanAuthor
Yeo, Yee-ChiaAuthor
Year2011 (April 1)Volume50
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.04df01Search in ResearchGate
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Mindat Ref. ID15037963Long-form Identifiermindat:1:5:15037963:0
GUID0
Full ReferenceGong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Zhu, Ivana, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia (2011) Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain withIn situDoping for Series Resistance Reduction. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04df01
Plain TextGong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Zhu, Ivana, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia (2011) Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain withIn situDoping for Series Resistance Reduction. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04df01
In(2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics

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Gong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, textscIvana, textscIvana, Zhu, Zhu, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia (2011) Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain withIn situDoping for Series Resistance Reduction. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04df01
Zhu, Zhu, Gong, Xiao, Ivana, Ivana, Yeo, Yee-Chia (2012) In$_{0.53}$Ga$_{0.47}$As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N$^{+}$ Doped Regions for Leakage Suppression. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bf03
Zhu, Zhu, Gong, Xiao, Yeo, Ivana (2012) In0.53Ga0.47As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N+Doped Regions for Leakage Suppression. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bf03
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Yoon, JongChul, Hiroki, Akira, Kobayashi, Kazutoshi (2012) Higher-Order Effect of Source–Drain Series Resistance on Saturation Drain Current in Sub-20 nm Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 51. 111101 doi:10.1143/jjap.51.111101
 
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