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Gu, Xun, Tomita, Yugo, Nemoto, Takenao, Miyatani, Kotaro, Saito, Akane, Kobayashi, Yasuo, Teramoto, Akinobu, Kuroda, Rihito, Kuroki, Shin-Ichiro, Kawase, Kazumasa, Nozawa, Toshihisa, Matsuoka, Takaaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-$k$ Dielectric Fluorocarbon on Advanced Cu Interconnects. Japanese Journal of Applied Physics, 51. 5 doi:10.1143/jjap.51.05ec03

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Reference TypeJournal (article/letter/editorial)
TitleIntegration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-$k$ Dielectric Fluorocarbon on Advanced Cu Interconnects
JournalJapanese Journal of Applied Physics
AuthorsGu, XunAuthor
Tomita, YugoAuthor
Nemoto, TakenaoAuthor
Miyatani, KotaroAuthor
Saito, AkaneAuthor
Kobayashi, YasuoAuthor
Teramoto, AkinobuAuthor
Kuroda, RihitoAuthor
Kuroki, Shin-IchiroAuthor
Kawase, KazumasaAuthor
Nozawa, ToshihisaAuthor
Matsuoka, TakaakiAuthor
Sugawa, ShigetoshiAuthor
Ohmi, TadahiroAuthor
Year2012 (May 21)Volume51
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.05ec03Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15040304Long-form Identifiermindat:1:5:15040304:5
GUID0
Full ReferenceGu, Xun, Tomita, Yugo, Nemoto, Takenao, Miyatani, Kotaro, Saito, Akane, Kobayashi, Yasuo, Teramoto, Akinobu, Kuroda, Rihito, Kuroki, Shin-Ichiro, Kawase, Kazumasa, Nozawa, Toshihisa, Matsuoka, Takaaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-$k$ Dielectric Fluorocarbon on Advanced Cu Interconnects. Japanese Journal of Applied Physics, 51. 5 doi:10.1143/jjap.51.05ec03
Plain TextGu, Xun, Tomita, Yugo, Nemoto, Takenao, Miyatani, Kotaro, Saito, Akane, Kobayashi, Yasuo, Teramoto, Akinobu, Kuroda, Rihito, Kuroki, Shin-Ichiro, Kawase, Kazumasa, Nozawa, Toshihisa, Matsuoka, Takaaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-$k$ Dielectric Fluorocarbon on Advanced Cu Interconnects. Japanese Journal of Applied Physics, 51. 5 doi:10.1143/jjap.51.05ec03
In(2012) Japanese Journal of Applied Physics Vol. 51. Japan Society of Applied Physics

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Gu, Xun, Tomita, Yugo, Nemoto, Takenao, Miyatani, Kotaro, Saito, Akane, Kobayashi, Yasuo, Teramoto, Akinobu, Kuroda, Rihito, Kuroki, Shin-Ichiro, Kawase, Kazumasa, Nozawa, Toshihisa, Matsuoka, Takaaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-kDielectric Fluorocarbon on Advanced Cu Interconnects. Japanese Journal of Applied Physics, 51 (5) 5 doi:10.7567/jjap.51.05ec03
Gu, Xun, Nemoto, Takenao, Tomita, Yugo, Shirotori, Akihide, Miyatani, Kotaro, Saito, Akane, Kobayashi, Yasuo, Teramoto, Akinobu, Kuroki, Shin-Ichiro, Nozawa, Toshihisa, Matsuoka, Takaaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2011) Electrical Characteristics of Novel Non-porous Low-kDielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.1143/jjap.50.05eb02
Gu, Xun, Nemoto, Takenao, Tomita, Yugo, Shirotori, Akihide, Miyatani, Kotaro, Saito, Akane, Kobayashi, Yasuo, Teramoto, Akinobu, Kuroki, Shin-Ichiro, Nozawa, Toshihisa, Matsuoka, Takaaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2011) Electrical Characteristics of Novel Non-porous Low-kDielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05eb02
Gu, Xun, Nemoto, Takenao, Tomita, Yugo, Teramoto, Akinobu, Kuroda, Rihito, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Advanced Direct-Polishing Process Development of Non-Porous Ultralow-kDielectric Fluorocarbon with Plasma Treatment on Cu Interconnects. Journal of the Electrochemical Society, 159. doi:10.1149/2.049204jes
Gu, Xun, Nemoto, Takenao, Tomita, Yugo, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2011) Tribological Effects of Brush Scrubbing in Post Chemical Mechanical Planarization Cleaning on Electrical Characteristics in Novel Non-porous Low-kDielectric Fluorocarbon on Cu Interconnects. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.1143/jjap.50.05ec07
Gu, Xun, Nemoto, Takenao, Tomita, Yugo, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2011) Tribological Effects of Brush Scrubbing in Post Chemical Mechanical Planarization Cleaning on Electrical Characteristics in Novel Non-porous Low-kDielectric Fluorocarbon on Cu Interconnects. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05ec07
Kikuchi, Yoshiyuki, Miyatani, Kotaro, Kobayashi, Yasuo, Kawamura, Kohei, Nemoto, Takenao, Nakamura, Masahiro, Matsumoto, Hirokazu, Ito, Azumi, Shirotori, Akihide, Nozawa, Toshihisa, Matsuoka, Takaaki (2012) Robust Ultralow-$k$ Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51. 5 doi:10.1143/jjap.51.05ec02
Gu, Xun, Nemoto, Takenao, Teramoto, Akinobu, Sakuragi, Misa, Sugawa, Shigetoshi, Ohmi, Tadahiro (2011) Tribological Study of Brush Scrubbing in Post-Chemical Mechanical Planarization Cleaning in Non-porous Ultralow-k Dielectric∕Cu Interconnects. Journal of the Electrochemical Society, 158. doi:10.1149/2.046111jes
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Nemoto, Takenao, Imai, Hiroshi, Teramoto, Akinobu, Ito, Takashi, Sugawa, Shigetoshi, Ohmi, Tadahiro (2008) Tantalum Nitride Sputtering Deposition with Xe on Fluorocarbon for Cu Interconnects. Journal of the Electrochemical Society, 155. doi:10.1149/1.2883736
Inatsuka, Takuya, Kumagai, Yuki, Kuroda, Rihito, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2012) Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dc02
 
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