Koga, Kazunori, Nakahara, Kenta, Kim, Yeon-Won, Matsunaga, Takeaki, Yamashita, Daisuke, Matsuzaki, Hidefumi, Uchida, Giichiro, Kamataki, Kunihiro, Itagaki, Naho, Shiratani, Masaharu (2012) Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ad03
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Koga, Kazunori | Author | |
| Nakahara, Kenta | Author | ||
| Kim, Yeon-Won | Author | ||
| Matsunaga, Takeaki | Author | ||
| Yamashita, Daisuke | Author | ||
| Matsuzaki, Hidefumi | Author | ||
| Uchida, Giichiro | Author | ||
| Kamataki, Kunihiro | Author | ||
| Itagaki, Naho | Author | ||
| Shiratani, Masaharu | Author | ||
| Year | 2012 (January 20) | Volume | 51 |
| Issue | 1 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.51.01ad03Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15041472 | Long-form Identifier | mindat:1:5:15041472:0 |
| GUID | 0 | ||
| Full Reference | Koga, Kazunori, Nakahara, Kenta, Kim, Yeon-Won, Matsunaga, Takeaki, Yamashita, Daisuke, Matsuzaki, Hidefumi, Uchida, Giichiro, Kamataki, Kunihiro, Itagaki, Naho, Shiratani, Masaharu (2012) Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ad03 | ||
| Plain Text | Koga, Kazunori, Nakahara, Kenta, Kim, Yeon-Won, Matsunaga, Takeaki, Yamashita, Daisuke, Matsuzaki, Hidefumi, Uchida, Giichiro, Kamataki, Kunihiro, Itagaki, Naho, Shiratani, Masaharu (2012) Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ad03 | ||
| In | (2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics | ||
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