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Sawaguchi, Daiki, Sato, Hideki, Hata, Koichi, Miyake, Hideto, Iida, Kazuo, Hiramatsu, Kazumasa (2012) Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ah03

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Reference TypeJournal (article/letter/editorial)
TitleGrowth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition
JournalJapanese Journal of Applied Physics
AuthorsSawaguchi, DaikiAuthor
Sato, HidekiAuthor
Hata, KoichiAuthor
Miyake, HidetoAuthor
Iida, KazuoAuthor
Hiramatsu, KazumasaAuthor
Year2012 (January 20)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.01ah03Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15041495Long-form Identifiermindat:1:5:15041495:9
GUID0
Full ReferenceSawaguchi, Daiki, Sato, Hideki, Hata, Koichi, Miyake, Hideto, Iida, Kazuo, Hiramatsu, Kazumasa (2012) Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ah03
Plain TextSawaguchi, Daiki, Sato, Hideki, Hata, Koichi, Miyake, Hideto, Iida, Kazuo, Hiramatsu, Kazumasa (2012) Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ah03
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics

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Sawaguchi, Daiki, Sato, Hideki, Hata, Koichi, Miyake, Hideto, Iida, Kazuo, Hiramatsu, Kazumasa (2012) Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ah03
Miyake, Hideto, Motogaito, Atsushi, Hiramatsu, Kazumasa (1999) Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l1000
Shimahara, Yuki, Miyake, Hideto, Hiramatsu, Kazumasa, Fukuyo, Fumitsugu, Okada, Tomoyuki, Takaoka, Hidetsugu, Yoshida, Harumasa (2011) Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 50 (9) 95502 doi:10.1143/jjap.50.095502
Miyake, Hideto, Ohtake, Hiroyuki, Sugiyama, Koichi, Hiramatsu, Kazumasa (2000) Solution Growth of CuGaxIn1-xSe2from CuSe Solutions. Japanese Journal of Applied Physics, 39. 60 doi:10.7567/jjaps.39s1.60
Miyake, Hideto, Hibi, Masanori, Sugiyama, Koichi, Hiramatsu, Kazumasa (2000) THM Growth of Bulk CuInTe2Single Crystals from In Solution. Japanese Journal of Applied Physics, 39. 54 doi:10.7567/jjaps.39s1.54
Shimahara, Yuki, Miyake, Hideto, Hiramatsu, Kazumasa, Fukuyo, Fumitsugu, Okada, Tomoyuki, Takaoka, Hidetsugu, Yoshida, Harumasa (2011) Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 50 (9) 95502 doi:10.7567/jjap.50.095502
Terada, Yuusuke, Yoshida, Harumasa, Urushido, Tatsuhiro, Miyake, Hideto, Hiramatsu, Kazumasa (2002) Field Emission from GaN Self-Organized Nanotips. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l1194
Yoshida, Harumasa, Urushido, Tatsuhiro, Miyake, Hideto, Hiramatsu, Kazumasa (2001) Formation of GaN Self-Organized Nanotips by Reactive Ion Etching. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l1301
Urushido, Tatsuhiro, Yoshida, Harumasa, Miyake, Hideto, Hiramatsu, Kazumasa (2002) Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l31
Kida, Yoshihiro, Shibata, Tomohiko, Miyake, Hideto, Hiramatsu, Kazumasa (2003) Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l572
Liu, Yu-Huai, Tanabe, Tomoaki, Miyake, Hideto, Hiramatsu, Kazumasa, Shibata, Tomohiko, Tanaka, Mutsuhiro, Masa, Yoshihiko (2005) Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l505
 
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