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Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2012) Quantum Chemical Investigation for Chemical Dry Etching of SiO2by Flowing NF3into H2Downflow Plasma. Japanese Journal of Applied Physics, 51 (1) 16201 doi:10.7567/jjap.51.016201

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Reference TypeJournal (article/letter/editorial)
TitleQuantum Chemical Investigation for Chemical Dry Etching of SiO2by Flowing NF3into H2Downflow Plasma
JournalJapanese Journal of Applied Physics
AuthorsHayashi, ToshioAuthor
Ishikawa, KenjiAuthor
Sekine, MakotoAuthor
Hori, MasaruAuthor
Kono, AkihiroAuthor
Suu, KoukouAuthor
Year2012 (January 1)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.016201Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15041581Long-form Identifiermindat:1:5:15041581:9
GUID0
Full ReferenceHayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2012) Quantum Chemical Investigation for Chemical Dry Etching of SiO2by Flowing NF3into H2Downflow Plasma. Japanese Journal of Applied Physics, 51 (1) 16201 doi:10.7567/jjap.51.016201
Plain TextHayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2012) Quantum Chemical Investigation for Chemical Dry Etching of SiO2by Flowing NF3into H2Downflow Plasma. Japanese Journal of Applied Physics, 51 (1) 16201 doi:10.7567/jjap.51.016201
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics

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Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2012) Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3into N2Downflow Plasma. Japanese Journal of Applied Physics, 51 (2) 26505 doi:10.7567/jjap.51.026505
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2012) Quantum Chemical Investigation for Chemical Dry Etching of SiO$_{2}$ by Flowing NF$_{3}$ into H$_{2}$ Downflow Plasma. Japanese Journal of Applied Physics, 51 (1) 16201 doi:10.1143/jjap.51.016201
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2012) Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF$_{3}$ into N$_{2}$ Downflow Plasma. Japanese Journal of Applied Physics, 51. 26505 doi:10.1143/jjap.51.026505
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2011) Dissociation Channels of c-C4F8to CF2Radical in Reactive Plasma. Japanese Journal of Applied Physics, 50 (3) 36203 doi:10.7567/jjap.50.036203
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru, Kono, Akihiro, Suu, Koukou (2011) Dissociation Channels of c-C4F8to CF2Radical in Reactive Plasma. Japanese Journal of Applied Physics, 50. 36203 doi:10.1143/jjap.50.036203
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru (2015) Electronic properties of HBr, O2and Cl2used in Si etching. Japanese Journal of Applied Physics, 54 (6) 6 doi:10.7567/jjap.54.06ga03
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru (2018) Dissociative properties of 1,1,1,2-tetrafluoroethane obtained by computational chemistry. Japanese Journal of Applied Physics, 57 (6) 6 doi:10.7567/jjap.57.06jc02
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru (2016) Computational study on SiH4dissociation channels and H abstraction reactions. Japanese Journal of Applied Physics, 55 (7) 7 doi:10.7567/jjap.55.07ld07
Kondo, Yusuke, Ishikawa, Kenji, Hayashi, Toshio, Miyawaki, Yudai, Takeda, Keigo, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru (2015) Silicon nitride etching performance of CH2F2plasma diluted with argon or krypton. Japanese Journal of Applied Physics, 54 (4) 40303 doi:10.7567/jjap.54.040303
Hayashi, Toshio, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru (2019) Electronic properties and primarily dissociation channels of fluoroethane compounds. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab09ca
Liu, Zecheng, Ishikawa, Kenji, Imamura, Masato, Tsutsumi, Takayoshi, Kondo, Hiroki, Oda, Osamu, Sekine, Makoto, Hori, Masaru (2018) Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma. Japanese Journal of Applied Physics, 57 (6) 6 doi:10.7567/jjap.57.06jd01
 
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