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Mizushima, Yoriko, Kitada, Hideki, Koshikawa, Kazushige, Suzuki, Shinsuke, Nakamura, Tomoji, Ohba, Takayuki (2012) Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation. Japanese Journal of Applied Physics, 51 (5) 5 doi:10.7567/jjap.51.05ee03

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Reference TypeJournal (article/letter/editorial)
TitleNovel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
JournalJapanese Journal of Applied Physics
AuthorsMizushima, YorikoAuthor
Kitada, HidekiAuthor
Koshikawa, KazushigeAuthor
Suzuki, ShinsukeAuthor
Nakamura, TomojiAuthor
Ohba, TakayukiAuthor
Year2012 (May 1)Volume51
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.05ee03Search in ResearchGate
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Mindat Ref. ID15042704Long-form Identifiermindat:1:5:15042704:1
GUID0
Full ReferenceMizushima, Yoriko, Kitada, Hideki, Koshikawa, Kazushige, Suzuki, Shinsuke, Nakamura, Tomoji, Ohba, Takayuki (2012) Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation. Japanese Journal of Applied Physics, 51 (5) 5 doi:10.7567/jjap.51.05ee03
Plain TextMizushima, Yoriko, Kitada, Hideki, Koshikawa, Kazushige, Suzuki, Shinsuke, Nakamura, Tomoji, Ohba, Takayuki (2012) Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation. Japanese Journal of Applied Physics, 51 (5) 5 doi:10.7567/jjap.51.05ee03
In(2012, May) Japanese Journal of Applied Physics Vol. 51 (5) Japan Society of Applied Physics

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Mizushima, Yoriko, Kitada, Hideki, Koshikawa, Kazushige, Suzuki, Shinsuke, Nakamura, Tomoji, Ohba, Takayuki (2012) Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation. Japanese Journal of Applied Physics, 51. 5 doi:10.1143/jjap.51.05ee03
Nakatsuka, Osamu, Kitada, Hideki, Kim, Youngsuk, Mizushima, Yoriko, Nakamura, Tomoji, Ohba, Takayuki, Zaima, Shigeaki (2011) Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05ed03
Kitada, Hideki, Maeda, Nobuhide, Fujimoto, Koji, Mizushima, Yoriko, Nakata, Yoshihiro, Nakamura, Tomoji, Ohba, Takayuki (2011) Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05ed02
Kitada, Hideki, Maeda, Nobuhide, Fujimoto, Koji, Mizushima, Yoriko, Nakata, Yoshihiro, Nakamura, Tomoji, Ohba, Takayuki (2011) Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.1143/jjap.50.05ed02
Nakatsuka, Osamu, Kitada, Hideki, Kim, Youngsuk, Mizushima, Yoriko, Nakamura, Tomoji, Ohba, Takayuki, Zaima, Shigeaki (2011) Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.1143/jjap.50.05ed03
Taoka, Noriyuki, Nakatsuka, Osamu, Mizushima, Yoriko, Kitada, Hideki, Kim, Young Suk, Nakamura, Tomoji, Ohba, Takayuki, Zaima, Shigeaki (2014) Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction. Japanese Journal of Applied Physics, 53 (5) 5 doi:10.7567/jjap.53.05ge03
Mizushima, Yoriko, Kim, Youngsuk, Nakamura, Tomoji, Sugie, Ryuichi, Hashimoto, Hideki, Uedono, Akira, Ohba, Takayuki (2014) Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration. Japanese Journal of Applied Physics, 53 (5) 5 doi:10.7567/jjap.53.05ge04
Dote, Aki, Kitada, Hideki, Mizushima, Yoriko, Nakamura, Tomoji, Sakuyama, Seiki (2016) Analyzing and modeling methods for warpages of thin and large dies with redistribution layer. Japanese Journal of Applied Physics, 55 (6) 6 doi:10.7567/jjap.55.06jc03
Tominaga, Shigeru, Abe, Daisuke, Enomoto, Taro, Kondo, Seiichi, Kitada, Hideki, Ohba, Takayuki (2010) Hybrid Electrochemical Mechanical Planarization Process for Cu Dual-Damascene Through-Silicon Via Using Noncontact Electrode Pad. Japanese Journal of Applied Physics, 49 (5) 5 doi:10.1143/jjap.49.05fg01
Lin, Ye, Tan, Chuan Seng (2018) Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias. Japanese Journal of Applied Physics, 57 (7) 7 doi:10.7567/jjap.57.07mf01
Uedono, Akira, Mizushima, Yoriko, Kim, Youngsuk, Nakamura, Tomoji, Ohba, Takayuki, Yoshihara, Nakaaki, Oshima, Nagayasu, Suzuki, Ryoichi (2014) Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams. Journal of Applied Physics, 116 (13). 134501pp. doi:10.1063/1.4896829
 
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