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Liu, Ningyang, Li, Ding, Wang, Lei, Liu, Lei, Yang, Wei, Li, Lei, Cao, Wenyu, Lu, Cimang, Wan, Chenghao, Chen, Weihua, Hu, Xiaodong (2012) Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations. Japanese Journal of Applied Physics, 51 (7) 71001 doi:10.7567/jjap.51.071001

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations
JournalJapanese Journal of Applied Physics
AuthorsLiu, NingyangAuthor
Li, DingAuthor
Wang, LeiAuthor
Liu, LeiAuthor
Yang, WeiAuthor
Li, LeiAuthor
Cao, WenyuAuthor
Lu, CimangAuthor
Wan, ChenghaoAuthor
Chen, WeihuaAuthor
Hu, XiaodongAuthor
Year2012 (July 1)Volume51
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.071001Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15042904Long-form Identifiermindat:1:5:15042904:5
GUID0
Full ReferenceLiu, Ningyang, Li, Ding, Wang, Lei, Liu, Lei, Yang, Wei, Li, Lei, Cao, Wenyu, Lu, Cimang, Wan, Chenghao, Chen, Weihua, Hu, Xiaodong (2012) Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations. Japanese Journal of Applied Physics, 51 (7) 71001 doi:10.7567/jjap.51.071001
Plain TextLiu, Ningyang, Li, Ding, Wang, Lei, Liu, Lei, Yang, Wei, Li, Lei, Cao, Wenyu, Lu, Cimang, Wan, Chenghao, Chen, Weihua, Hu, Xiaodong (2012) Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations. Japanese Journal of Applied Physics, 51 (7) 71001 doi:10.7567/jjap.51.071001
In(2012, July) Japanese Journal of Applied Physics Vol. 51 (7) Japan Society of Applied Physics

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