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Wang, Lei, Li, Rui, Li, Ding, Liu, Ningyang, Liu, Lei, Chen, Weihua, Wang, Cunda, Yang, Zhijian, Hu, Xiaodong (2010) Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer. Applied Physics Letters, 96 (6). 61110pp. doi:10.1063/1.3315887

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Reference TypeJournal (article/letter/editorial)
TitleStrain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer
JournalApplied Physics Letters
AuthorsWang, LeiAuthor
Li, RuiAuthor
Li, DingAuthor
Liu, NingyangAuthor
Liu, LeiAuthor
Chen, WeihuaAuthor
Wang, CundaAuthor
Yang, ZhijianAuthor
Hu, XiaodongAuthor
Year2010 (February 8)Volume96
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3315887Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8585559Long-form Identifiermindat:1:5:8585559:9
GUID0
Full ReferenceWang, Lei, Li, Rui, Li, Ding, Liu, Ningyang, Liu, Lei, Chen, Weihua, Wang, Cunda, Yang, Zhijian, Hu, Xiaodong (2010) Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer. Applied Physics Letters, 96 (6). 61110pp. doi:10.1063/1.3315887
Plain TextWang, Lei, Li, Rui, Li, Ding, Liu, Ningyang, Liu, Lei, Chen, Weihua, Wang, Cunda, Yang, Zhijian, Hu, Xiaodong (2010) Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer. Applied Physics Letters, 96 (6). 61110pp. doi:10.1063/1.3315887
In(2010, February) Applied Physics Letters Vol. 96 (6) AIP Publishing

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