Nishimura, Takahito, Hirai, Yoshiaki, Kurokawa, Yasuyoshi, Yamada, Akira (2015) Control of valence band offset at CdS/Cu(In,Ga)Se2interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se2solar cells. Japanese Journal of Applied Physics, 54 (8) 8 doi:10.7567/jjap.54.08kc08
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Control of valence band offset at CdS/Cu(In,Ga)Se2interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se2solar cells | ||
Journal | Japanese Journal of Applied Physics | ||
Authors | Nishimura, Takahito | Author | |
Hirai, Yoshiaki | Author | ||
Kurokawa, Yasuyoshi | Author | ||
Yamada, Akira | Author | ||
Year | 2015 (August 1) | Volume | 54 |
Issue | 8 | ||
Publisher | Japan Society of Applied Physics | ||
DOI | doi:10.7567/jjap.54.08kc08Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 15045310 | Long-form Identifier | mindat:1:5:15045310:1 |
GUID | 0 | ||
Full Reference | Nishimura, Takahito, Hirai, Yoshiaki, Kurokawa, Yasuyoshi, Yamada, Akira (2015) Control of valence band offset at CdS/Cu(In,Ga)Se2interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se2solar cells. Japanese Journal of Applied Physics, 54 (8) 8 doi:10.7567/jjap.54.08kc08 | ||
Plain Text | Nishimura, Takahito, Hirai, Yoshiaki, Kurokawa, Yasuyoshi, Yamada, Akira (2015) Control of valence band offset at CdS/Cu(In,Ga)Se2interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se2solar cells. Japanese Journal of Applied Physics, 54 (8) 8 doi:10.7567/jjap.54.08kc08 | ||
In | (2015, August) Japanese Journal of Applied Physics Vol. 54 (8) Japan Society of Applied Physics |
See Also
These are possibly similar items as determined by title/reference text matching only.