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Shinoda, Nao, Itokawa, Hiroshi, Fujitsuka, Ryota, Sekine, Katsuyuki, Onoue, Seiji, Tonotani, Junichi (2016) Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04eb09

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Reference TypeJournal (article/letter/editorial)
TitleBehavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition
JournalJapanese Journal of Applied Physics
AuthorsShinoda, NaoAuthor
Itokawa, HiroshiAuthor
Fujitsuka, RyotaAuthor
Sekine, KatsuyukiAuthor
Onoue, SeijiAuthor
Tonotani, JunichiAuthor
Year2016 (April 1)Volume55
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.55.04eb09Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15046103Long-form Identifiermindat:1:5:15046103:8
GUID0
Full ReferenceShinoda, Nao, Itokawa, Hiroshi, Fujitsuka, Ryota, Sekine, Katsuyuki, Onoue, Seiji, Tonotani, Junichi (2016) Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04eb09
Plain TextShinoda, Nao, Itokawa, Hiroshi, Fujitsuka, Ryota, Sekine, Katsuyuki, Onoue, Seiji, Tonotani, Junichi (2016) Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04eb09
In(2016, April) Japanese Journal of Applied Physics Vol. 55 (4) Japan Society of Applied Physics

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