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Fujii, Shosuke, Fujitsuka, Ryota, Sekine, Katsuyuki, Koyama, Masato, Yasuda, Naoki (2012) Interface State in Metal–Oxide–Nitride–Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress. Japanese Journal of Applied Physics, 51 (12) 124302 doi:10.7567/jjap.51.124302

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Reference TypeJournal (article/letter/editorial)
TitleInterface State in Metal–Oxide–Nitride–Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress
JournalJapanese Journal of Applied Physics
AuthorsFujii, ShosukeAuthor
Fujitsuka, RyotaAuthor
Sekine, KatsuyukiAuthor
Koyama, MasatoAuthor
Yasuda, NaokiAuthor
Year2012 (December 1)Volume51
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.124302Search in ResearchGate
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Mindat Ref. ID15042009Long-form Identifiermindat:1:5:15042009:7
GUID0
Full ReferenceFujii, Shosuke, Fujitsuka, Ryota, Sekine, Katsuyuki, Koyama, Masato, Yasuda, Naoki (2012) Interface State in Metal–Oxide–Nitride–Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress. Japanese Journal of Applied Physics, 51 (12) 124302 doi:10.7567/jjap.51.124302
Plain TextFujii, Shosuke, Fujitsuka, Ryota, Sekine, Katsuyuki, Koyama, Masato, Yasuda, Naoki (2012) Interface State in Metal–Oxide–Nitride–Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress. Japanese Journal of Applied Physics, 51 (12) 124302 doi:10.7567/jjap.51.124302
In(2012, December) Japanese Journal of Applied Physics Vol. 51 (12) Japan Society of Applied Physics

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Fujii, Shosuke, Fujitsuka, Ryota, Sekine, Katsuyuki, Koyama, Masato, Yasuda, Naoki (2012) Interface State in Metal–Oxide–Nitride–Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress. Japanese Journal of Applied Physics, 51. 124302 doi:10.1143/jjap.51.124302
Fujii, Shosuke, Kusai, Haruka, Sakuma, Kiwamu, Koyama, Masato (2014) Improvement of erase-retention trade-off in metal–oxide–nitride–oxide–silicon memories by control of nitrogen profile in SiN charge-trapping layer. Japanese Journal of Applied Physics, 53 (5) 58005 doi:10.7567/jjap.53.058005
Fujiki, Jun, Fujii, Shosuke, Yasuda, Naoki, Muraoka, Kouichi (2010) Direct Measurement of Back-Tunneling Current during Program/Erase Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories and Its Dependence on Gate Work Function. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dd07
Fujiki, Jun, Haimoto, Takashi, Yasuda, Naoki, Koyama, Masato (2011) Dynamics of the Charge Centroid in Metal–Oxide–Nitride–Oxide–Silicon Memory Cells during Avalanche Injection and Fowler–Nordheim Injection Based on Incremental-Step-Pulse Programming. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dd06
Fujii, Shosuke, Yasuda, Naoki, Fujiki, Jun, Muraoka, Kouichi (2010) A New Method to Extract the Charge Centroid in the Program Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dd06
Kusai, Haruka, Morota, Misako, Oda, Masato, Fujii, Shosuke, Sakuma, Kiwamu, Koyama, Masato (2012) Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dd04
Fujiki, Jun, Haimoto, Takashi, Yasuda, Naoki, Koyama, Masato (2011) Dynamics of the Charge Centroid in Metal–Oxide–Nitride–Oxide–Silicon Memory Cells during Avalanche Injection and Fowler–Nordheim Injection Based on Incremental-Step-Pulse Programming. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd06
Fujitsuka, Ryota, Sekine, Katsuyuki, Sekihara, Akiko, Fukumoto, Atsushi, Fujita, Junya, Aiso, Fumiki, Ozawa, Yoshio (2012) Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal–Oxide–Nitride–Oxide–Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation. Japanese Journal of Applied Physics, 51 (2) 21103 doi:10.7567/jjap.51.021103
Kusai, Haruka, Morota, Misako, Oda, Masato, Fujii, Shosuke, Sakuma, Kiwamu, Koyama, Masato (2012) Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dd04
Daniel, Ramiz, Shaham-Diamand, Yossi, Roizin, Yakov (2004) Interface states in cycled hot electron injection program∕hot hole erase silicon–oxide-nitride–oxide–silicon memories. Applied Physics Letters, 85 (25). 6266-6268 doi:10.1063/1.1839289
Shinoda, Nao, Itokawa, Hiroshi, Fujitsuka, Ryota, Sekine, Katsuyuki, Onoue, Seiji, Tonotani, Junichi (2016) Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04eb09
 
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