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Benedetto, J.M., Boesch, H.E., McLean, F.B. (1988) Dose and energy dependence of interface trap formation in cobalt-60 and X-ray environments. IEEE Transactions on Nuclear Science, 35 (6) 1260-1264 doi:10.1109/23.25449

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Reference TypeJournal (article/letter/editorial)
TitleDose and energy dependence of interface trap formation in cobalt-60 and X-ray environments
JournalIEEE Transactions on Nuclear Science
AuthorsBenedetto, J.M.Author
Boesch, H.E.Author
McLean, F.B.Author
Year1988Volume35
Issue6
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
DOIdoi:10.1109/23.25449Search in ResearchGate
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Mindat Ref. ID15572102Long-form Identifiermindat:1:5:15572102:1
GUID0
Full ReferenceBenedetto, J.M., Boesch, H.E., McLean, F.B. (1988) Dose and energy dependence of interface trap formation in cobalt-60 and X-ray environments. IEEE Transactions on Nuclear Science, 35 (6) 1260-1264 doi:10.1109/23.25449
Plain TextBenedetto, J.M., Boesch, H.E., McLean, F.B. (1988) Dose and energy dependence of interface trap formation in cobalt-60 and X-ray environments. IEEE Transactions on Nuclear Science, 35 (6) 1260-1264 doi:10.1109/23.25449
In(1988, December) IEEE Transactions on Nuclear Science Vol. 35 (6) Institute of Electrical and Electronics Engineers (IEEE)

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Lelis, A.J., Boesch, H.E., Oldham, T.R., McLean, F.B. (1988) Reversibility of trapped hole annealing. IEEE Transactions on Nuclear Science, 35 (6) 1186-1191 doi:10.1109/23.25437
Boesch, H.E. (1988) Time-dependent interface trap effects in MOS devices. IEEE Transactions on Nuclear Science, 35 (6) 1160-1167 doi:10.1109/23.25434
McLean, F.B., Boesch, H.E. (1989) Time-dependent degradation of MOSFET channel mobility following pulsed irradiation. IEEE Transactions on Nuclear Science, 36 (6) 1772-1783 doi:10.1109/23.45369
Lelis, A.J., Oldham, T.R., Boesch, H.E., McLean, F.B. (1989) The nature of the trapped hole annealing process. IEEE Transactions on Nuclear Science, 36 (6) 1808-1815 doi:10.1109/23.45373
Moore, R.A., Benedetto, J.M., McGarrity, J.M., McLean, F.B. (1991) Neutron irradiation effects on PZT thin films for nonvolatile-memory applications. IEEE Transactions on Nuclear Science, 38 (6) 1078-1082 doi:10.1109/23.124077
Saks, N.S., Dozier, C.M., Brown, D.B. (1988) Time dependence of interface trap formation in MOSFETs following pulsed irradiation. IEEE Transactions on Nuclear Science, 35 (6) 1168-1177 doi:10.1109/23.25435
Benedetto, J. M., Boesch, H. E., Oldham, T. R., Brown, G. A. (1987) Measurement of Low-Energy X-Ray Dose Enhancement in MOS Devices with Metal Silicide Gates. IEEE Transactions on Nuclear Science, 34 (6) 1540-1543 doi:10.1109/tns.1987.4337512
Fleetwood, D.M., Winokur, P.S., Schwank, J.R. (1988) Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments. IEEE Transactions on Nuclear Science, 35 (6) 1497-1505 doi:10.1109/23.25487
Benedetto, J.M., Moore, R.A., McLean, F.B., Brody, P.S., Dey, S.K. (1990) The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors. IEEE Transactions on Nuclear Science, 37 (6) 1713-1717 doi:10.1109/23.101181
Boesch, H. E., McLean, F. B., Benedetto, J. M., McGarrity, J. M., Bailey, W. E. (1986) Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose. IEEE Transactions on Nuclear Science, 33 (6) 1191-1197 doi:10.1109/tns.1986.4334577
McLean, F.B. (1988) Generic impulse response function for MOS systems and its application to linear response analysis. IEEE Transactions on Nuclear Science, 35 (6) 1178-1185 doi:10.1109/23.25436
 
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