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(1988, December) IEEE Transactions on Nuclear Science Vol. 35 (6) Institute of Electrical and Electronics Engineers (IEEE)

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Reference TypeJournal (issue)
JournalIEEE Transactions on Nuclear Science
Year1988 (December)Volume35
Issue<   6
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Mindat Ref. ID15572012Long-form Identifiermindat:1:5:15572012:3
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Full Reference(1988, December) IEEE Transactions on Nuclear Science Vol. 35 (6) Institute of Electrical and Electronics Engineers (IEEE)
Plain Text(1988, December) IEEE Transactions on Nuclear Science Vol. 35 (6) Institute of Electrical and Electronics Engineers (IEEE)
In(1988) IEEE Transactions on Nuclear Science Vol. 35. Institute of Electrical and Electronics Engineers (IEEE)

Contains

McWhorter, P.J., Winokur, P.S., Pastorek, R.A. (1988) Donor/acceptor nature of radiation-induced interface traps. IEEE Transactions on Nuclear Science, 35 (6) 1154-1159 doi:10.1109/23.25433
Boesch, H.E. (1988) Time-dependent interface trap effects in MOS devices. IEEE Transactions on Nuclear Science, 35 (6) 1160-1167 doi:10.1109/23.25434
Saks, N.S., Dozier, C.M., Brown, D.B. (1988) Time dependence of interface trap formation in MOSFETs following pulsed irradiation. IEEE Transactions on Nuclear Science, 35 (6) 1168-1177 doi:10.1109/23.25435
McLean, F.B. (1988) Generic impulse response function for MOS systems and its application to linear response analysis. IEEE Transactions on Nuclear Science, 35 (6) 1178-1185 doi:10.1109/23.25436
Lelis, A.J., Boesch, H.E., Oldham, T.R., McLean, F.B. (1988) Reversibility of trapped hole annealing. IEEE Transactions on Nuclear Science, 35 (6) 1186-1191 doi:10.1109/23.25437
Stahlbush, R.E., Lawrence, R.K., Hughes, H.L., Saks, N.S. (1988) Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon. IEEE Transactions on Nuclear Science, 35 (6) 1192-1196 doi:10.1109/23.25438
Barnes, C., Zietlow, T., Nakamura, K. (1988) The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra. IEEE Transactions on Nuclear Science, 35 (6) 1197-1202 doi:10.1109/23.25439
Freitag, R.K., Burke, E.A., Dozier, C.M., Brown, D.B. (1988) The development of non-uniform deposition of holes in gate oxides. IEEE Transactions on Nuclear Science, 35 (6) 1203-1207 doi:10.1109/23.25440
Dale, C.J., Marshall, P.W., Burke, E.A., Summers, G.P., Wolicki, E.A. (1988) High energy electron induced displacement damage in silicon. IEEE Transactions on Nuclear Science, 35 (6) 1208-1214 doi:10.1109/23.25441
Evans, B.D. (1988) The role of hydrogen as a radiation protection agent at low temperature in a low-OH, pure silica optical fiber. IEEE Transactions on Nuclear Science, 35 (6) 1215-1220 doi:10.1109/23.25442
Summers, G.P., Burke, E.A., Xapsos, M.A., Dale, C.J., Marshall, P.W., Petersen, E.L. (1988) Displacement damage in GaAs structures. IEEE Transactions on Nuclear Science, 35 (6) 1221-1226 doi:10.1109/23.25443
Nishioka, Y., da Silva, E.F., Ma, T.P. (1988) Evidence for. IEEE Transactions on Nuclear Science, 35 (6) 1227-1233 doi:10.1109/23.25444
Saks, N.S., Klein, R.B., Griscom, D.L. (1988) Formation of interface traps in MOSFETs during annealing following low temperature irradiation. IEEE Transactions on Nuclear Science, 35 (6) 1234-1240 doi:10.1109/23.25445
Kelly, J.G., Luera, T.F., Posey, L.D., Williams, F.G. (1988) Simulation fidelity issues in reactor irradiation of electronics-reactor environments. IEEE Transactions on Nuclear Science, 35 (6) 1242-1247 doi:10.1109/23.25446
McKeever, S.W.S., Mische, E., Summers, G.P. (1988) Track interaction in gamma- and charged-particle-irradiated thermoluminescence dosimeters. IEEE Transactions on Nuclear Science, 35 (6) 1248-1254 doi:10.1109/23.25447
Carlson, G.A., Lorence, L.J. (1988) A differential absorption spectrometer for determining flash X-ray spectra from 10 to 2000 keV. IEEE Transactions on Nuclear Science, 35 (6) 1255-1259 doi:10.1109/23.25448
Benedetto, J.M., Boesch, H.E., McLean, F.B. (1988) Dose and energy dependence of interface trap formation in cobalt-60 and X-ray environments. IEEE Transactions on Nuclear Science, 35 (6) 1260-1264 doi:10.1109/23.25449
Carlson, G.A., Beutler, D.E., Seager, K.D., Knott, D.P. (1988) Comparison of measured responses in two spectrally-sensitive X-ray detectors to predictions obtained using the ITS radiation transport code. IEEE Transactions on Nuclear Science, 35 (6) 1272-1277 doi:10.1109/23.25451
Maruyama, X.K., Buskirk, F.R., Neighbours, J.R., Fizpatrick, R.D., Cromar, P.F., Mack, J.M. (1988) Measurements of off-axis energy deposition form 100 MeV electrons traversing water and liquid nitrogen. IEEE Transactions on Nuclear Science, 35 (6) 1278-1281 doi:10.1109/23.25452
Halbeib, J.A., Sanford, T.W.L., Poukey, J.W. (1988) Radiation environment of HERMES III. IEEE Transactions on Nuclear Science, 35 (6) 1282-1287 doi:10.1109/23.25453
Fleetwood, A., Fleetwood, R., Kerris, K., Merkel, G., Smith, M. (1988) Improved e-beam electron range measurements: experiments and analysis. IEEE Transactions on Nuclear Science, 35 (6) 1294-1299 doi:10.1109/23.25455
Burke, E.A., Bender, G.E., Pimbley, J.K., Summers, G.P., Dale, C.J., Xapsos, M.A., Marshall, P.W. (1988) Gamma induced dose fluctuations in a charge injection device. IEEE Transactions on Nuclear Science, 35 (6) 1302-1306 doi:10.1109/23.25456
Montroy, J.T., Baron, R., Albright, G.C., Boisvert, J., Flesner, L.D. (1988) Energetic electron-induced impurity ionization in Si:As IBC detectors. IEEE Transactions on Nuclear Science, 35 (6) 1307-1312 doi:10.1109/23.25457
Waterman, J.R. (1988) Radiation induced interface trap limited storage times in 10 micron cutoff wavelength (Hg,Cd)Te MIS capacitors. IEEE Transactions on Nuclear Science, 35 (6) 1313-1318 doi:10.1109/23.25458
Higgins, D.F. (1988) Analytic calculations of the magnetic field produced by large SGEMP boundary layers. IEEE Transactions on Nuclear Science, 35 (6) 1320-1323 doi:10.1109/23.25459
Seidler, W. (1988) Pulse power heating of the D-region. IEEE Transactions on Nuclear Science, 35 (6) 1324-1336 doi:10.1109/23.25460
Williams, J.W., Resner, G.D., Balestri, R.J. (1988) Comparisons of models for aperture coupling to a wire. IEEE Transactions on Nuclear Science, 35 (6) 1337-1343 doi:10.1109/23.25461
Stanley, T.D. (1988) The state-of-the-art in SOI technology. IEEE Transactions on Nuclear Science, 35 (6) 1346-1349 doi:10.1109/23.25462
Platteter, D.G., Cheek, T.F. (1988) The use of multiple oxygen implants for fabrication of bipolar silicon-on-insulator integrated circuits. IEEE Transactions on Nuclear Science, 35 (6) 1350-1354 doi:10.1109/23.25463
Leray, J.L., Dupont-Nivet, E., Musseau, O., Coic, Y.M., Umbert, A., Lalande, P., Pere, J.F., Auberton-Herve, A.J., Bruel, M., Jaussaud, C., Margail, J., Giffard, B., Truche, R., Martin, F. (1988) From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena. IEEE Transactions on Nuclear Science, 35 (6) 1355-1360 doi:10.1109/23.25464
Fleetwood, D.M., Tsao, S.S., Winokur, P.S. (1988) Total-dose hardness assurance issues for SOI MOSFETs. IEEE Transactions on Nuclear Science, 35 (6) 1361-1367 doi:10.1109/23.25465
Redman-White, W., Dunn, T.R., Lucas, D.R., Smithers, P.A., Winchcombe, S.A. (1988) A radiation hard frequency reference IC. IEEE Transactions on Nuclear Science, 35 (6) 1368-1371 doi:10.1109/23.25466
Annamalai, N.K., Biwer, M.C. (1988) Leakage currents in SOI MOSFETs. IEEE Transactions on Nuclear Science, 35 (6) 1372-1378 doi:10.1109/23.25467
Dejenfelt, A.T. (1988) Interface-state measurement on SOS using the charge-pumping technique on gated-diode test structures. IEEE Transactions on Nuclear Science, 35 (6) 1379-1384 doi:10.1109/23.25468
Allred, D.B., Benson, J.D., Cohen, H.A., Raitt, W.J., Burt, D.A., Katz, I., Jongeward, G.A., Antoniades, J., Alport, M., Boyd, D., Nunnally, W.C., Dillon, W., Pickett, J., Torbert, R.B. (1988) The SPEAR-1 experiment: high voltage effects on space charging in the ionosphere. IEEE Transactions on Nuclear Science, 35 (6) 1386-1393 doi:10.1109/23.25469
Stillwell, R.P., Stevens, N.J., Crawford, G.K., Strader, S.R., Valles, J.R. (1988) AC system-plasma interactions. IEEE Transactions on Nuclear Science, 35 (6) 1394-1399 doi:10.1109/23.25470
Frezet, M., Granger, J.P., Levy, L., Hamelin, J. (1988) Assessment of charging behaviour of METEOSAT satellite in geosynchronous environment. IEEE Transactions on Nuclear Science, 35 (6) 1400-1406 doi:10.1109/23.25471
Dyer, C.S., Truscott, P.R., Sims, A.J., Comber, C., Hammond, N.D.A. (1988) Particle transport simulation for spaceborne, NaI gamma-ray spectrometers. IEEE Transactions on Nuclear Science, 35 (6) 1407-1411 doi:10.1109/23.25472
Gussenhoven, M.S., Brautigam, D.H., Mullen, E.G. (1988) Characterizing solar flare high energy particles in near-Earth orbits. IEEE Transactions on Nuclear Science, 35 (6) 1412-1419 doi:10.1109/23.25473
Keshavarz, A.A., Fischer, T.A., Dawes, W.R., Hawkins, C.F. (1988) Computer simulation of ionizing radiation burnout in power MOSFETs. IEEE Transactions on Nuclear Science, 35 (6) 1422-1427 doi:10.1109/23.25474
Zoutendyk, J.A., Goben, C.A., Berndt, D.F. (1988) Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar process. IEEE Transactions on Nuclear Science, 35 (6) 1428-1431 doi:10.1109/23.25475
Schwank, J.R., Sexton, F.W., Fleetwood, D.M., Jones, R.V., Flores, R.S., Rodgers, M.S., Hughes, K.L. (1988) Temperature effects on the radiation response of MOS devices. IEEE Transactions on Nuclear Science, 35 (6) 1432-1437 doi:10.1109/23.25476
Krantz, R.J., Bloss, W.L., O'Loughlin, M.J. (1988) High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MOSFETs): threshold voltage. IEEE Transactions on Nuclear Science, 35 (6) 1438-1443 doi:10.1109/23.25477
Casey, R.H., Herman, W.N., LaCombe, D.J., Ragonese, L.J., Immorlica, A., Anderson, W.T. (1988) Bias control of long term radiation-induced transients in GaAs MESFETs. IEEE Transactions on Nuclear Science, 35 (6) 1444-1450 doi:10.1109/23.25478
Suter, J.J., Maurer, R.H., Kinnison, J.D. (1988) The susceptibility of electrodeless quartz crystal BVA resonators to proton ionization effects. IEEE Transactions on Nuclear Science, 35 (6) 1451-1455 doi:10.1109/23.25479
Chrisey, D.B., Maisch, W.G., Summers, G.P., Knudson, A.R. (1988) The influence of radiation damage on the superconducting properties of thin film YBa/sub 2/Cu/sub 3/O/sub 7- delta /. IEEE Transactions on Nuclear Science, 35 (6) 1456-1460 doi:10.1109/23.25480
Messenger, G.C., Coppage, F.N. (1988) Ferroelectric memories: a possible answer to the hardened nonvolatile question. IEEE Transactions on Nuclear Science, 35 (6) 1461-1466 doi:10.1109/23.25481
Enlow, E.W., Alexander, D.R. (1988) Photocurrent modeling of modern microcircuit pn junctions. IEEE Transactions on Nuclear Science, 35 (6) 1467-1474 doi:10.1109/23.25482
Hanes, M.H., Bartko, J., Hwang, J.-M., Rai-Choudhury, P., Leslie, S.G. (1988) Radiation-hard static induction transistor. IEEE Transactions on Nuclear Science, 35 (6) 1475-1479 doi:10.1109/23.25483
Janousek, B.K., Yamada, W.E., Bloss, W.L. (1988) Neutron radiation effects in GaAs junction field effect transistors. IEEE Transactions on Nuclear Science, 35 (6) 1480-1486 doi:10.1109/23.25484
Buskirk, F.R., Neighbours, J.R., Maruyama, X.K., Sweigard, E.L., Dries, L.J., Huang, C.Y., Junga, F.A. (1988) Radiation effects in bulk samples of high T/sub c/ superconductors YBa/sub 2/Cu/sub 3/O/sub 6+ delta / and GdBa/sub 2/Cu/sub 3/O/sub 6+ delta /. IEEE Transactions on Nuclear Science, 35 (6) 1487-1490 doi:10.1109/23.25485
Kohler, R.A., Kushner, R.A., Kuo Hua Lee, (1988) Total dose radiation hardness of MOS devices in hermetic ceramic packages. IEEE Transactions on Nuclear Science, 35 (6) 1492-1496 doi:10.1109/23.25486
Fleetwood, D.M., Winokur, P.S., Schwank, J.R. (1988) Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments. IEEE Transactions on Nuclear Science, 35 (6) 1497-1505 doi:10.1109/23.25487
Namenson, A. (1988) Lot uniformity and small sample sizes in hardness assurance. IEEE Transactions on Nuclear Science, 35 (6) 1506-1511 doi:10.1109/23.25488
Raburn, W.D., Buchner, S.P., Kang, K., Singh, R., Sayers, S. (1988) Comparison of threshold transient upset levels induced by flash X-rays and pulsed lasers. IEEE Transactions on Nuclear Science, 35 (6) 1512-1516 doi:10.1109/23.25489
Buchner, S., Knudson, A., Kang, K., Campbell, A.B. (1988) Charge collection from focussed picosecond laser pulses. IEEE Transactions on Nuclear Science, 35 (6) 1517-1522 doi:10.1109/23.25490
Normand, E., Wert, J.L., Doherty, W.R., Oberg, D.L., Measel, P.R., Criswell, T.L. (1988) Use of PuBe source to simulate neutron-induced single event upsets in static RAMs. IEEE Transactions on Nuclear Science, 35 (6) 1523-1528 doi:10.1109/23.25491
Blaes, B.R., Buehler, M.G., Lin, Y.S., Hicks, K.A. (1988) A CMOS matrix for extracting MOSFET parameters before and after irradiation. IEEE Transactions on Nuclear Science, 35 (6) 1529-1535 doi:10.1109/23.25492
Schrimpf, R.D., Wahle, P.J., Andrews, R.C., Cooper, D.B., Galloway, K.F. (1988) Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETs. IEEE Transactions on Nuclear Science, 35 (6) 1536-1540 doi:10.1109/23.25493
Sampson, D.F. (1988) Time and total dose response of non-volatile UVPROMs. IEEE Transactions on Nuclear Science, 35 (6) 1542-1546 doi:10.1109/23.25494
Darwish, M.N., Dolly, M.C., Goodwin, C.A., Titus, J.L. (1988) Radiation effects on power integrated circuits. IEEE Transactions on Nuclear Science, 35 (6) 1547-1551 doi:10.1109/23.25495
Heuner, R., Zazzu, V., Pennisi, L. (1988) Processing and circuit design enhance a data converter's radiation tolerance. IEEE Transactions on Nuclear Science, 35 (6) 1552-1556 doi:10.1109/23.25496
Browning, J.S., Connors, M.P., Freshman, C.L., Finney, G.A. (1988) Total dose characterization of a CMOS technology at high dose rates and temperatures. IEEE Transactions on Nuclear Science, 35 (6) 1557-1562 doi:10.1109/23.25497
Plaag, R.E., Baze, M.P., Johnston, A.H. (1988) A distributed model for radiation-induced latchup. IEEE Transactions on Nuclear Science, 35 (6) 1563-1569 doi:10.1109/23.25498
Binder, D. (1988) Analytic SEU rate calculation compared to space data. IEEE Transactions on Nuclear Science, 35 (6) 1570-1572 doi:10.1109/23.25499
Zoutendyk, J.A., Secrest, E.C., Berndt, D.F. (1988) Investigation of single-event upset (SEU) in an advanced bipolar process. IEEE Transactions on Nuclear Science, 35 (6) 1573-1577 doi:10.1109/23.25500
Wagner, R.S., Bordes, N., Bradley, J.M., Maggiore, C.J., Knudson, A.R., Campbell, A.B. (1988) Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodes. IEEE Transactions on Nuclear Science, 35 (6) 1578-1584 doi:10.1109/23.25501
Stapor, W.J., McDonald, P.T., Knudson, A.R., Campbell, A.B., Glagola, B.G. (1988) Charge collection in silicon for ions of different energy but same linear energy transfer (LET) IEEE Transactions on Nuclear Science, 35 (6) 1585-1590 doi:10.1109/23.25502
Peczalski, A., Bergman, J., Berndt, D., Lai, J.C. (1988) Physical SEU model for circuit simulations. IEEE Transactions on Nuclear Science, 35 (6) 1591-1595 doi:10.1109/23.25503
Stapor, W.J., McDonald, P.T., Swickert, S.L., Campbell, A.B., Massengill, L.W., Kerns, S.E. (1988) Low temperature proton induced upsets in NMOS resistive load static RAM. IEEE Transactions on Nuclear Science, 35 (6) 1596-1601 doi:10.1109/23.25504
Axness, C.L., Schwank, J.R., Winokur, P.S., Browning, J.S., Koga, R., Fleetwood, D.M. (1988) Single event upset in irradiated 16 K CMOS SRAMs. IEEE Transactions on Nuclear Science, 35 (6) 1602-1607 doi:10.1109/23.25505
Rollins, J.G., Tsubota, T.K., Kolasinski, W.A., Haddad, N.F., Rockett, L., Cerrila, M., Hennley, W.B. (1988) Cost-effective numerical simulation of SEU. IEEE Transactions on Nuclear Science, 35 (6) 1608-1612 doi:10.1109/23.25506
McNulty, P.J., Taktieen, M.H., Lynch, J.E., Weber, W.M., Yuan, H.T., Salzman, J.F. (1988) Charge collection in HI/sup 2/L bipolar transistors. IEEE Transactions on Nuclear Science, 35 (6) 1613-1618 doi:10.1109/23.25507
Nichols, D.K., Coss, J.R., Smith, L.S., Rax, B., Huebner, M., Watson, K. (1988) Full temperature single event upset characterization of two microprocessor technologies. IEEE Transactions on Nuclear Science, 35 (6) 1619-1621 doi:10.1109/23.25508
Harboe-Sorensen, R., Adams, L., Sanderson, T.K. (1988) A summary of SEU test results using Californium-252. IEEE Transactions on Nuclear Science, 35 (6) 1622-1628 doi:10.1109/23.25509
Browning, J.S., Holtkamp, D.B. (1988) Particle LET spectra from microelectronics packaging materials subjected to neutron and proton irradiation. IEEE Transactions on Nuclear Science, 35 (6) 1629-1633 doi:10.1109/23.25510
Tsao, C.H., Silberberg, R., Letaw, J.R. (1988) A comparison of neutron-induced SEU rates in Si and GaAs devices. IEEE Transactions on Nuclear Science, 35 (6) 1634-1637 doi:10.1109/23.25511
Koga, R., Kolasinski, W.A., Osborn, J.V., Elder, J.H., Chitty, R. (1988) SEU test techniques for 256 K static RAMs and comparisons of upsets by heavy ions and protons. IEEE Transactions on Nuclear Science, 35 (6) 1638-1643 doi:10.1109/23.25512
Zoutendyk, J.A., Schwartz, H.R., Nevill, L.R. (1988) Lateral charge transport from heavy-ion tracks in integrated circuit chips. IEEE Transactions on Nuclear Science, 35 (6) 1644-1647 doi:10.1109/23.25513
Matloubian, M., Zorinsky, E.J., Spratt, D.B. (1988) Total dose radiation characteristics of SOI MOSFETs fabricated using ISLANDS technology. IEEE Transactions on Nuclear Science, 35 (6) 1650-1652 doi:10.1109/23.25514
Palkuti, L.J., Ling, P., Leonov, P., Kawayoshi, H., Ormond, R., Yuan, J. (1988) Radiation response of CMOS/SOI devices formed by wafer bond and etchback. IEEE Transactions on Nuclear Science, 35 (6) 1653-1656 doi:10.1109/23.25515
Schrantz, G.A., van Vonno, N.W., Krull, W.A., Rao, M.A., Long, S.I., Kroemer, H. (1988) Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors. IEEE Transactions on Nuclear Science, 35 (6) 1657-1661 doi:10.1109/23.25516
Zietlow, T.C., Barnes, C.E., Morse, T.C., Grusynski, J.S., Nakamura, K., Amram, A., Wilson, K.T. (1988) Post-irradiation effects in CMOS integrated circuits (SRAMs) IEEE Transactions on Nuclear Science, 35 (6) 1662-1666 doi:10.1109/23.25517
Kushner, R.A., Kohler, R.A., Steenwyk, S.D., Desko, J.C., Alchesky, L.C., Arnold, R.H., Benevit, C.A., Clemons, D.G., Longfellow, D.A., Lee, K.H., Flores, R.S. (1988) Fabrication and total dose testing of a 256 K*1 radiation-hardened SRAM. IEEE Transactions on Nuclear Science, 35 (6) 1667-1669 doi:10.1109/23.25518
Flesner, L.D., Zuleeg, R., Kolasinski, W.A. (1988) Comparison of heavy ion and electron-beam upset data for GaAs SRAMs. IEEE Transactions on Nuclear Science, 35 (6) 1670-1672 doi:10.1109/23.25519
Song, Y., Vu, K.N., Cable, J.S., Witteles, A.A., Kolasinski, W.A., Koga, R., Elder, J.H., Osborn, J.V., Martin, R.C., Ghoniem, N.M. (1988) Experimental and analytical investigation of single event, multiple bit upsets in poly-silicon load, 64 K*1 NMOS SRAMs. IEEE Transactions on Nuclear Science, 35 (6) 1673-1677 doi:10.1109/23.25520
Elder, J.H., Osborn, J., Kolasinski, W.A., Koga, R. (1988) A method for characterizing a microprocessor's vulnerability to SEU. IEEE Transactions on Nuclear Science, 35 (6) 1678-1681 doi:10.1109/23.25521
Rockett, L.R. (1988) An SEU-hardened CMOS data latch design. IEEE Transactions on Nuclear Science, 35 (6) 1682-1687 doi:10.1109/23.25522
(1988) 1988 IEEE Annual Conference on Nuclear and Space Radiation Effects Conference. IEEE Transactions on Nuclear Science, 35 (6) doi:10.1109/23.25429
Fleetwood, D.M., Beutler, D.E., Lorence, L.J., Brown, D.B., Draper, B.L., Riewe, L.C., Rosenstock, H.B., Knott, D.P. (1988) Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides. IEEE Transactions on Nuclear Science, 35 (6) 1265-1271 doi:10.1109/23.25450
Lorence, L.J. (1988) Electron photoemission predictions with CEPXS/ONETRAN. IEEE Transactions on Nuclear Science, 35 (6) 1288-1293 doi:10.1109/23.25454

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