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Xu, Bei, Hu, Jichao, Meng, Jiaqi, He, Xiaomin, Wang, Xi, Pu, Hongbin (2023) Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment. Crystals, 13 (2) 160 doi:10.3390/cryst13020160

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Reference TypeJournal (article/letter/editorial)
TitleStudy of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment
JournalCrystals
AuthorsXu, BeiAuthor
Hu, JichaoAuthor
Meng, JiaqiAuthor
He, XiaominAuthor
Wang, XiAuthor
Pu, HongbinAuthor
Year2023 (January 17)Volume13
Issue2
PublisherMDPI AG
DOIdoi:10.3390/cryst13020160Search in ResearchGate
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Mindat Ref. ID15667627Long-form Identifiermindat:1:5:15667627:6
GUID0
Full ReferenceXu, Bei, Hu, Jichao, Meng, Jiaqi, He, Xiaomin, Wang, Xi, Pu, Hongbin (2023) Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment. Crystals, 13 (2) 160 doi:10.3390/cryst13020160
Plain TextXu, Bei, Hu, Jichao, Meng, Jiaqi, He, Xiaomin, Wang, Xi, Pu, Hongbin (2023) Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment. Crystals, 13 (2) 160 doi:10.3390/cryst13020160
In(2023, January) Crystals Vol. 13 (2) MDPI AG

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