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He, Xiaomin, Song, Xinyang, Hu, Jichao (2024) The effect of vacancy defects on the electronic characteristics of the β-Ga2O3/AlN interface. Journal of Crystal Growth, 627. 127509 doi:10.1016/j.jcrysgro.2023.127509

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of vacancy defects on the electronic characteristics of the β-Ga2O3/AlN interface
JournalJournal of Crystal Growth
AuthorsHe, XiaominAuthor
Song, XinyangAuthor
Hu, JichaoAuthor
Year2024 (February)Volume627
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2023.127509Search in ResearchGate
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Mindat Ref. ID16998524Long-form Identifiermindat:1:5:16998524:2
GUID0
Full ReferenceHe, Xiaomin, Song, Xinyang, Hu, Jichao (2024) The effect of vacancy defects on the electronic characteristics of the β-Ga2O3/AlN interface. Journal of Crystal Growth, 627. 127509 doi:10.1016/j.jcrysgro.2023.127509
Plain TextHe, Xiaomin, Song, Xinyang, Hu, Jichao (2024) The effect of vacancy defects on the electronic characteristics of the β-Ga2O3/AlN interface. Journal of Crystal Growth, 627. 127509 doi:10.1016/j.jcrysgro.2023.127509
In(2024) Journal of Crystal Growth Vol. 627. Elsevier BV

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He, Xiaomin, Wang, Meng, Meng, Jiaqi, Hu, Jichao, Jiang, Yuquan (2022) The effect of vacancy defects on the electronic properties of β-Ga2O3. Computational Materials Science, 215. 111777 doi:10.1016/j.commatsci.2022.111777
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He, Xiaomin, Hu, Jichao, Pu, Hongbin, Liang, Yi, Jia, Teng (2020) Adsorption characteristics composition of Ge and Si on 4H-SiC(0 0 0 1) surface. Journal of Crystal Growth, 531. 125370pp. doi:10.1016/j.jcrysgro.2019.125370
Hu, Jichao, Meng, Jiaqi, Xu, Bei, He, Xiaomin, Wang, Xi, Lin, Tao (2023) Effect of annealing temperatures on properties of CuAlO2 films prepared by sol-gel method on 4H-SiC substrates. Journal of Crystal Growth, 603. 127005 doi:10.1016/j.jcrysgro.2022.127005
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Kim, Hyeon-Cheol, Janardhanam, V., Pokhrel, Sameer, Choi, Chel-Jong (2025) Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode. Journal of Crystal Growth, 649. doi:10.1016/j.jcrysgro.2024.127941
He, Xiaomin, Hu, Jichao, Tian, Xue (2021) Electronic characteristics of PbS quantum dots passivated by halides on different surfaces. Applied Surface Science, 568. 150736pp. doi:10.1016/j.apsusc.2021.150736
Wang, Cuimei, Wang, Xiaoliang, Hu, Guoxin, Wang, Junxi, Xiao, Hongling, Li, Jianping (2006) The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures. Journal of Crystal Growth, 289 (2). 415-418 doi:10.1016/j.jcrysgro.2005.11.118
 
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