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Zhang, Hong, Guo, Hongxia, Lei, Zhifeng, Peng, Chao, Zhang, Zhangang, Chen, Ziwen, Sun, Changhao, He, Yujuan, Zhang, Fengqi, Pan, Xiaoyu, Zhong, Xiangli, Ouyang, Xiaoping (2023) Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation. Chinese Physics B, 32 (2) 28504 doi:10.1088/1674-1056/ac8cda

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Reference TypeJournal (article/letter/editorial)
TitleExperiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation
JournalChinese Physics B
AuthorsZhang, HongAuthor
Guo, HongxiaAuthor
Lei, ZhifengAuthor
Peng, ChaoAuthor
Zhang, ZhangangAuthor
Chen, ZiwenAuthor
Sun, ChanghaoAuthor
He, YujuanAuthor
Zhang, FengqiAuthor
Pan, XiaoyuAuthor
Zhong, XiangliAuthor
Ouyang, XiaopingAuthor
Year2023 (February 1)Volume32
Issue2
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/ac8cdaSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID15697595Long-form Identifiermindat:1:5:15697595:9
GUID0
Full ReferenceZhang, Hong, Guo, Hongxia, Lei, Zhifeng, Peng, Chao, Zhang, Zhangang, Chen, Ziwen, Sun, Changhao, He, Yujuan, Zhang, Fengqi, Pan, Xiaoyu, Zhong, Xiangli, Ouyang, Xiaoping (2023) Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation. Chinese Physics B, 32 (2) 28504 doi:10.1088/1674-1056/ac8cda
Plain TextZhang, Hong, Guo, Hongxia, Lei, Zhifeng, Peng, Chao, Zhang, Zhangang, Chen, Ziwen, Sun, Changhao, He, Yujuan, Zhang, Fengqi, Pan, Xiaoyu, Zhong, Xiangli, Ouyang, Xiaoping (2023) Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation. Chinese Physics B, 32 (2) 28504 doi:10.1088/1674-1056/ac8cda
In(2023, January) Chinese Physics B Vol. 32 (2) IOP Publishing

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