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Pan, Xiaoyu, Guo, Hongxia, Luo, Yinhong, Zhang, Fengqi, Ding, Lili (2018) Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation. Chinese Physics B, 27. 38501pp. doi:10.1088/1674-1056/27/3/038501

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
JournalChinese Physics B
AuthorsPan, XiaoyuAuthor
Guo, HongxiaAuthor
Luo, YinhongAuthor
Zhang, FengqiAuthor
Ding, LiliAuthor
Year2018 (March)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/3/038501Search in ResearchGate
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Mindat Ref. ID6009199Long-form Identifiermindat:1:5:6009199:4
GUID0
Full ReferencePan, Xiaoyu, Guo, Hongxia, Luo, Yinhong, Zhang, Fengqi, Ding, Lili (2018) Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation. Chinese Physics B, 27. 38501pp. doi:10.1088/1674-1056/27/3/038501
Plain TextPan, Xiaoyu, Guo, Hongxia, Luo, Yinhong, Zhang, Fengqi, Ding, Lili (2018) Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation. Chinese Physics B, 27. 38501pp. doi:10.1088/1674-1056/27/3/038501
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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Guo, Hongxia, Ding, Lili, Xiao, Yao, Zhang, Fengqi, Luo, Yinhong, Zhao, Wen, Wang, Yuanming (2016) Pattern dependence in synergistic effects of total dose on single-event upset hardness. Chinese Physics B, 25. 96109pp. doi:10.1088/1674-1056/25/9/096109
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Lei, Zhi-Feng, Zhang, Zhan-Gang, En, Yun-Fei, Huang, Yun (2018) Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool. Chinese Physics B, 27. 66105pp. doi:10.1088/1674-1056/27/6/066105
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