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Pavelescu, E.-M., Dumitrescu, M., Guina, M. (2014) Instability of structural defects generated by electron irradiation in GaInNAs quantum wells. Journal of Luminescence, 154. 584-586 doi:10.1016/j.jlumin.2014.05.042

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Reference TypeJournal (article/letter/editorial)
TitleInstability of structural defects generated by electron irradiation in GaInNAs quantum wells
JournalJournal of Luminescence
AuthorsPavelescu, E.-M.Author
Dumitrescu, M.Author
Guina, M.Author
Year2014 (October)Volume154
PublisherElsevier BV
DOIdoi:10.1016/j.jlumin.2014.05.042Search in ResearchGate
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Mindat Ref. ID16840940Long-form Identifiermindat:1:5:16840940:4
GUID0
Full ReferencePavelescu, E.-M., Dumitrescu, M., Guina, M. (2014) Instability of structural defects generated by electron irradiation in GaInNAs quantum wells. Journal of Luminescence, 154. 584-586 doi:10.1016/j.jlumin.2014.05.042
Plain TextPavelescu, E.-M., Dumitrescu, M., Guina, M. (2014) Instability of structural defects generated by electron irradiation in GaInNAs quantum wells. Journal of Luminescence, 154. 584-586 doi:10.1016/j.jlumin.2014.05.042
In(2014) Journal of Luminescence Vol. 154. Elsevier BV

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Pavelescu, E.-M., Kudrawiec, R., Puustinen, J., Tukiainen, A., Guina, M. (2013) Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers. Journal of Luminescence, 136. 347-350 doi:10.1016/j.jlumin.2012.12.008
Pavelescu, E.-M., Kudrawiec, R., Dumitrescu, M. (2013) On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers. Journal of Luminescence, 141. 67-70 doi:10.1016/j.jlumin.2013.02.041
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Kudrawiec, R., Korpijärvi, V.-M., Poloczek, P., Misiewicz, J., Laukkanen, P., Pakarinen, J., Dumitrescu, M., Guina, M., Pessa, M. (2009) The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells. Applied Physics Letters, 95 (26). 261909pp. doi:10.1063/1.3275712
Pavelescu, E.-M., Hakkarainen, T., Dhaka, V.D.S., Tkachenko, N.V., Jouhti, T., Lemmetyinen, H., Pessa, M. (2005) Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth, 281 (2). 249-254 doi:10.1016/j.jcrysgro.2005.04.025
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Karirinne, S, Pavelescu, E-M, Konttinen, J, Jouhti, T, Pessa, M (2004) The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing. New Journal of Physics, 6. 192 doi:10.1088/1367-2630/6/1/192
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