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Pavelescu, E.-M., Kudrawiec, R., Puustinen, J., Tukiainen, A., Guina, M. (2013) Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers. Journal of Luminescence, 136. 347-350 doi:10.1016/j.jlumin.2012.12.008

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Reference TypeJournal (article/letter/editorial)
TitleEffects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers
JournalJournal of Luminescence
AuthorsPavelescu, E.-M.Author
Kudrawiec, R.Author
Puustinen, J.Author
Tukiainen, A.Author
Guina, M.Author
Year2013 (April)Volume136
PublisherElsevier BV
DOIdoi:10.1016/j.jlumin.2012.12.008Search in ResearchGate
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Mindat Ref. ID16842080Long-form Identifiermindat:1:5:16842080:5
GUID0
Full ReferencePavelescu, E.-M., Kudrawiec, R., Puustinen, J., Tukiainen, A., Guina, M. (2013) Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers. Journal of Luminescence, 136. 347-350 doi:10.1016/j.jlumin.2012.12.008
Plain TextPavelescu, E.-M., Kudrawiec, R., Puustinen, J., Tukiainen, A., Guina, M. (2013) Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers. Journal of Luminescence, 136. 347-350 doi:10.1016/j.jlumin.2012.12.008
In(2013) Journal of Luminescence Vol. 136. Elsevier BV

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Pavelescu, E.-M., Kudrawiec, R., Dumitrescu, M. (2013) On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers. Journal of Luminescence, 141. 67-70 doi:10.1016/j.jlumin.2013.02.041
Pavelescu, E.-M., Dumitrescu, M., Guina, M. (2014) Instability of structural defects generated by electron irradiation in GaInNAs quantum wells. Journal of Luminescence, 154. 584-586 doi:10.1016/j.jlumin.2014.05.042
Pavelescu, E.-M., Gheorghiu, A., Dumitrescu, M., Tukiainen, A., Jouhti, T., Hakkarainen, T., Kudrawiec, R., Andrzejewski, J., Misiewicz, J., Tkachenko, N., Dhaka, V. D. S., Lemmetyinen, H., Pessa, M. (2004) Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing. Applied Physics Letters, 85 (25). 6158-6160 doi:10.1063/1.1834997
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Korpijärvi, V.-M., Guina, M., Puustinen, J., Tuomisto, P., Rautiainen, J., Härkönen, A., Tukiainen, A., Okhotnikov, O., Pessa, M. (2009) MBE grown GaInNAs-based multi-Watt disk lasers. Journal of Crystal Growth, 311 (7). 1868-1871 doi:10.1016/j.jcrysgro.2008.10.083
Balanta, M.A.G., Orsi Gordo, V., Carvalho, A.R.H., Puustinen, J., Alghamdi, H.M., Henini, M., Galeti, H.V.A., Guina, M., Galvão Gobato, Y. (2017) Polarization resolved photoluminescence in GaAs1−xBix/GaAs quantum wells. Journal of Luminescence, 182. 49-52 doi:10.1016/j.jlumin.2016.10.008
Aho, A., Korpijärvi, V.-M., Tukiainen, A., Puustinen, J., Guina, M. (2014) Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 116 (21). 213101pp. doi:10.1063/1.4903318
Kudrawiec, R., Pavelescu, E.-M., Wagner, J., Sęk, G., Misiewicz, J., Dumitrescu, M., Konttinen, J., Gheorghiu, A., Pessa, M. (2004) Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs. Journal of Applied Physics, 96 (5). 2576-2579 doi:10.1063/1.1776312
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Kudrawiec, R., Pavelescu, E.-M., Andrzejewski, J., Misiewicz, J., Gheorghiu, A., Jouhti, T., Pessa, M. (2004) The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed. Journal of Applied Physics, 96 (5). 2909-2913 doi:10.1063/1.1774258
Kudrawiec, R., Syperek, M., Latkowska, M., Misiewicz, J., Korpijärvi, V.-M., Laukkanen, P., Pakarinen, J., Dumitrescu, M., Guina, M., Pessa, M. (2012) Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms. Journal of Applied Physics, 111 (6). 63514pp. doi:10.1063/1.3695457
 
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