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Wu, Defan, Zhao, Tong, Ye, Bin, Chen, Hao, Liang, Xingbo, Li, Shenzhong, Tian, Daxi, Yang, Deren, Ma, Xiangyang (2023) Comprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon. Journal of Applied Physics, 134 (15) doi:10.1063/5.0161897

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Reference TypeJournal (article/letter/editorial)
TitleComprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon
JournalJournal of Applied Physics
AuthorsWu, DefanAuthor
Zhao, TongAuthor
Ye, BinAuthor
Chen, HaoAuthor
Liang, XingboAuthor
Li, ShenzhongAuthor
Tian, DaxiAuthor
Yang, DerenAuthor
Ma, XiangyangAuthor
Year2023 (October 21)Volume134
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/5.0161897Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16892449Long-form Identifiermindat:1:5:16892449:5
GUID0
Full ReferenceWu, Defan, Zhao, Tong, Ye, Bin, Chen, Hao, Liang, Xingbo, Li, Shenzhong, Tian, Daxi, Yang, Deren, Ma, Xiangyang (2023) Comprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon. Journal of Applied Physics, 134 (15) doi:10.1063/5.0161897
Plain TextWu, Defan, Zhao, Tong, Ye, Bin, Chen, Hao, Liang, Xingbo, Li, Shenzhong, Tian, Daxi, Yang, Deren, Ma, Xiangyang (2023) Comprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon. Journal of Applied Physics, 134 (15) doi:10.1063/5.0161897
In(2023, October) Journal of Applied Physics Vol. 134 (15) AIP Publishing

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