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Dong, Peng, Zhao, Jian, Liang, Xingbo, Tian, Daxi, Yuan, Shuai, Yu, Xuegong, Ma, Xiangyang, Yang, Deren (2015) Oxygen precipitation in 1020 cmβˆ’3 germanium-doped Czochralski silicon. Journal of Applied Physics, 117 (2). 25705pp. doi:10.1063/1.4905584

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Reference TypeJournal (article/letter/editorial)
TitleOxygen precipitation in 1020 cmβˆ’3 germanium-doped Czochralski silicon
JournalJournal of Applied Physics
AuthorsDong, PengAuthor
Zhao, JianAuthor
Liang, XingboAuthor
Tian, DaxiAuthor
Yuan, ShuaiAuthor
Yu, XuegongAuthor
Ma, XiangyangAuthor
Yang, DerenAuthor
Year2015 (January 14)Volume117
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4905584Search in ResearchGate
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Mindat Ref. ID5201746Long-form Identifiermindat:1:5:5201746:5
GUID0
Full ReferenceDong, Peng, Zhao, Jian, Liang, Xingbo, Tian, Daxi, Yuan, Shuai, Yu, Xuegong, Ma, Xiangyang, Yang, Deren (2015) Oxygen precipitation in 1020 cmβˆ’3 germanium-doped Czochralski silicon. Journal of Applied Physics, 117 (2). 25705pp. doi:10.1063/1.4905584
Plain TextDong, Peng, Zhao, Jian, Liang, Xingbo, Tian, Daxi, Yuan, Shuai, Yu, Xuegong, Ma, Xiangyang, Yang, Deren (2015) Oxygen precipitation in 1020 cmβˆ’3 germanium-doped Czochralski silicon. Journal of Applied Physics, 117 (2). 25705pp. doi:10.1063/1.4905584
In(2015, January) Journal of Applied Physics Vol. 117 (2) AIP Publishing

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