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Sun, Kewei, Wang, Zaien, Wang, Shuang, Zhang, Song (2024) Morphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy. Journal of Crystal Growth, 627. 127503 doi:10.1016/j.jcrysgro.2023.127503

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Reference TypeJournal (article/letter/editorial)
TitleMorphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy
JournalJournal of Crystal Growth
AuthorsSun, KeweiAuthor
Wang, ZaienAuthor
Wang, ShuangAuthor
Zhang, SongAuthor
Year2024 (February)Volume627
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2023.127503Search in ResearchGate
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Mindat Ref. ID16948268Long-form Identifiermindat:1:5:16948268:0
GUID0
Full ReferenceSun, Kewei, Wang, Zaien, Wang, Shuang, Zhang, Song (2024) Morphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy. Journal of Crystal Growth, 627. 127503 doi:10.1016/j.jcrysgro.2023.127503
Plain TextSun, Kewei, Wang, Zaien, Wang, Shuang, Zhang, Song (2024) Morphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy. Journal of Crystal Growth, 627. 127503 doi:10.1016/j.jcrysgro.2023.127503
In(2024) Journal of Crystal Growth Vol. 627. Elsevier BV

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Sun, M.S., Zhang, J.C., Huang, J., Wang, J.F., Xu, K. (2016) AlN thin film grown on different substrates by hydride vapor phase epitaxy. Journal of Crystal Growth, 436. 62-67 doi:10.1016/j.jcrysgro.2015.11.040
Nagashima, Toru, Ishikawa, Reiko, Hitomi, Tatsuya, Yamamoto, Reo, Kotani, Junji, Kumagai, Yoshinao (2020) Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy. Journal of Crystal Growth, 540. 125644pp. doi:10.1016/j.jcrysgro.2020.125644
Liu, Dengfei, Xiong, Yu, Li, Jian, Xiao, Wenjia, Wang, Gang (2023) Design of large horizontal gallium nitride hydride vapor-phase epitaxy equipment and optimization of process parameters. Journal of Crystal Growth, 613. 127231 doi:10.1016/j.jcrysgro.2023.127231
Cai, D., Zheng, L.L., Zhang, H., Tassev, V.L., Bliss, D.F. (2005) Modeling of aluminum nitride growth by halide vapor transport epitaxy method. Journal of Crystal Growth, 276 (1). 182-193 doi:10.1016/j.jcrysgro.2004.11.339
Kumagai, Yoshinao, Yamane, Takayoshi, Koukitu, Akinori (2005) Growth of thick AlN layers by hydride vapor-phase epitaxy. Journal of Crystal Growth, 281 (1). 62-67 doi:10.1016/j.jcrysgro.2005.03.011
(2017) Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method. Crystal Growth & Design, 17 (7) 3806-3811 doi:10.1021/acs.cgd.7b00388
Lin, Xiangyu, Zhang, Hui, Li, Chaoyuan, Xie, Xinjian, Bian, Lifeng, Chen, Guifeng (2024) Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy. Journal of Crystal Growth, 625. 127451 doi:10.1016/j.jcrysgro.2023.127451
Storm, D.F., Hardy, M.T., Katzer, D.S., Nepal, N., Downey, B.P., Meyer, D.J., McConkie, Thomas O., Zhou, Lin, Smith, David J. (2016) Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates. Journal of Crystal Growth, 456. 121-132 doi:10.1016/j.jcrysgro.2016.08.047
Richter, E., Gridneva, E., Weyers, M., Tränkle, G. (2016) Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride. Journal of Crystal Growth, 456. 97-100 doi:10.1016/j.jcrysgro.2016.05.016
Su, X.J., Huang, J., Zhang, J.P., Wang, J.F., Xu, K. (2019) Microstructure and influence of buffer layer on threading dislocations in (0 0 0 1) AlN/sapphire grown by hydride vapor phase epitaxy. Journal of Crystal Growth, 515. 72-77 doi:10.1016/j.jcrysgro.2019.03.012
Morishita, Tomohiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu (2014) Homoepitaxial growth of AlN layers on freestanding AlN substrate by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 390. 46-50 doi:10.1016/j.jcrysgro.2013.12.023
 
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